FDY6342L ,Integrated Load SwitchApplications High performance trench technology for extremely low rDS(on) Power management Compa ..
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FDY6342L
Integrated Load Switch
FDY6342L Integrated Load Switch October 2008 FDY6342L tm Integrated Load Switch Features General Description Max r = 0.5 Ω at V = 4.5 V, I = –0.83 A This device is particularly suited for compact power DS(on) GS D management in portable electronic equipment where 2.5 V to Max r = 0.7 Ω at V = 2.5 V, I = –0.70 A DS(on) GS D 8 V input and 0.83 A output current capability are needed. This Max r = 1.2 Ω at V = 1.8 V, I = –0.43 A load switch integrates a small N-Channel power MOSFET (Q1) DS(on) GS D that drives a large P-Channel power MOSFET (Q2) in one tiny Max r = 1.8 Ω at V = 1.5 V, I = –0.36 A DS(on) GS D SC89-6 package. Control MOSFET (Q1) includes Zener protection for ESD ruggedness (>4 kV Human body model) Applications High performance trench technology for extremely low r DS(on) Power management Compact industry standard SC89-6 surface mount package Load switch RoHS Compliant Q2 Equivalent Circuit 6 3 Vout,C1 4 Vin,R1 5 OUT IN 4 V DROP ON/OFF 5 2 NC Q1 6 1 R2 1 R1,C1 ON/OFF 2 SC89-6 3 See Application Circuit MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Gate to Source Voltage (Q2) ±8 V IN V Gate to Source Voltage (Q1) –0.5 to 8 V ON/OFF Load Current -Continuous (Note 2) –0.83 I A Load -Pulsed (Note 2) –1.0 Power Dissipation (Note 1a) 0.625 P W D Power Dissipation (Note 1b) 0.446 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 200 θJA °C/W R Thermal Resistance, Junction to Ambient (Note 1b) 280 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity H FDY6342L SC89-6 7 ’’ 8 mm 3000 units 1 ©2008 FDY6342L Rev.B1
