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FDY3000NZFairchilN/a3000avai20V Dual N-Channel 2.5V Specified PowerTrench?MOSFET
FDY3000NZFAIRCHILDN/a30000avai20V Dual N-Channel 2.5V Specified PowerTrench?MOSFET
FDY3000NZFSCN/a6000avai20V Dual N-Channel 2.5V Specified PowerTrench?MOSFET


FDY3000NZ ,20V Dual N-Channel 2.5V Specified PowerTrench?MOSFETFeatures Thi s Dual N- Channel MOSFET has been desi gned x 600 mA, 20 V R = 700 m: @ V = 4. 5 V D ..
FDY3000NZ ,20V Dual N-Channel 2.5V Specified PowerTrench?MOSFETFDY3000NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET January 2007January 2007tmFDY3000NZ“Du ..
FDY3000NZ ,20V Dual N-Channel 2.5V Specified PowerTrench?MOSFETApplications x ESD prot ect i on di ode ( not e 3) x Li - Ion Bat t ery Pack ..
FDY300NZ ,20V Single N-Channel 2.5V Specified PowerTrench?MOSFETFeaturesThis Single N-Channel MOSFET has been designed· 600 mA, 20 V R = 700 mW @ V = 4.5 VDS(ON) G ..
FDY300NZ ,20V Single N-Channel 2.5V Specified PowerTrench?MOSFETApplications · ESD protection diode (note 3)· Li-Ion Battery Pack· RoHS Compliant1SG1G3DS 2DoAbsolu ..
FDY301NZ ,20V Single N-Channel 2.5V Specified PowerTrench?MOSFETFeatures This Single N-Channel MOSFET has been designed · 200 mA, 20 V R = 5 W @ V = 4.5 V DS(ON) ..
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FDY3000NZ
20V Dual N-Channel 2.5V Specified PowerTrench?MOSFET
January 2007”2007 Fairchil d Semi conduct or Corporation
FDY3000NZ Rev B
FDY3000NZ
Dual N-Channel 2. 5V Specified Po werTrench“ MOSFET neral Description is Dual N- Channel MOSFET has been designed ing Fairchild Semic onductor’s advanced Power
Trench process t o optimize the RDS(ON) @ VGS = 2.5v.
Applications Li- Ion Batte ry Pack atures 600 mA, 20 V RDS(ON) = 7 00 m:@ VGS = 4.5 V RDS(ON) = 8 50 m: @ VGS = 2.5 V ESD protection diode (note 3) RoHS Compliant solute Maxim um Ratings TA=25o C unless ot herwise noted mbol Parameter Ratings Units
VDSS Drain- Sourc e Voltage 20 V
VGSS Gate- Source Voltage r 12 V
ID Drai n Current – Conti nuous (Note 1a) 600 mA – Pulsed 1000
PD Power Dissipation (Stead y State) (Note 1a) 625 mW Note 1b) 446
TJ, TSTG Operating and St orage Juncti on Te mperature
Range 55 t o +150 qC
Thermal Characteristics
RTJA Th ermal Resistance, Junction-to- Ambient (Note 1a) 200 qC/W
RTJA Th ermal Resistance, Junction-to- Ambient (Note 1b) 280 ckage Marking and Orderi ng Infor mationvice Marking Device Reel Size Tape width Quantity FDY3000NZ 7 ’’ 8 mm 3000 units 2S1 D1D2
January 2007
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