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FDW2512NZFAIRCHILDN/a485avai20V Dual N-Channel 2.5V Specified PowerTrench MOSFET


FDW2512NZ ,20V Dual N-Channel 2.5V Specified PowerTrench MOSFETGeneral Description! 6A, 20V r = 0.028Ω, V = 4.5V This N-Channel MOSFET is produced using Fai ..
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FDW2512NZ
20V Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET December 2004 FDW2512NZ ® Dual N-Channel 2.5V Specified PowerTrench MOSFET Features General Description ! 6A, 20V r = 0.028Ω, V = 4.5V This N-Channel MOSFET is produced using Fairchild DS(ON) GS Semiconductor’s advanced PowerTrench process that has r = 0.036Ω, V = 2.5V DS(ON) GS been especially tailored to minimize the on-state resistance ! Extended V range (±12 V) for battery applications and yet maintain low gate charge for superior switching GS performance. These devices are well suited for portable ! HBM ESD Protection Level of 3.5kV Typical (note 3) electronics applications. ! High performance trench technology for extremely low r DS(ON) ! Low profile TSSOP-8 package Applications ! Load switch ! Battery charge ! Battery disconnect circuits D1 D2 G2 S2 S2 D2 G1 G1 G2 S1 S1 D1 S1 S2 Pin 1 TSSOP-8 ©2004 1 FDW2512NZ Rev. A
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