FDW2501NZ ,Dual N-Channel 2.5V Specified PowerTrench MOSFETFeatures This N -Channel 2.5V specified MOSFET is a rugged • 6 A, 20 V. R = 18 mΩ @ V = 4.5V DS(ON) ..
FDW2502P ,Dual P-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis P-Channel 2.5V specified MOSFET is a rugged• –4.4 A, –20 V. R = 0.035 Ω @ V = –4.5 VDS ..
FDW2502PZ ,Dual P-Channel 2.5V Specified PowerTrench MOSFETApplications • Load switch • High performance trench technology for extremely low RDS(ON) . • ..
FDW2503N ,Dual N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel 2.5V specified MOSFET is a rugged• 5.5 A, 20 V. R = 0.021 Ω @ V = 4.5 VDS(ON ..
FDW2503NZ ,Dual N-Channel 2.5V Specified PowerTrench MOSFETFeatures This N -Channel 2.5V specified MOSFET is a rugged • 5.5 A, 20 V. R = 20 mΩ @ V = 4.5V DS(O ..
FDW2504P ,Dual P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P-Channel 2.5V specified MOSFET is a rugged • –3.8 A, –20 V, R = 0.043 Ω @ V = –4.5 ..
FS225R12KE3 , EconoPACK with trench/fieldstop IGBT3 and EmCon High Efficiency diode
FS225R17KE3 , EconoPACK module with trench/fieldstop IGBT and EmCon3 diode
FS22SM-10 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS22SM-10 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS22SM-12A , MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS22SM-9 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FDW2501NZ
Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2501NZ April 2001 FDW2501NZ Ò Ò Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N -Channel 2.5V specified MOSFET is a rugged · 6 A, 20 V. R = 18 mW @ V = 4.5V DS(ON) GS gate version of Fairchild Semiconductor’s advanced RDS(ON) = 25 mW @ V GS = 2.5V PowerTrench process. It has been optimized for power management applications with a wide range of gate · Extended V range (±12V) for battery applications GSS drive voltage (2.5V – 12V). · ESD protection diode (note 3) Applications · Load switch · High performance trench technology for extremely low RDS(ON) · Motor drive · DC/DC conversion · Low profile TSSOP-8 package · Power management 1 8 2 7 3 6 4 5 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS VGSS Gate-Source Voltage ±12 V I D Drain Current – Continuous (Note 1a) 6 A – Pulsed 30 P Power Dissipation (Note 1a) 1.0 W D (Note 1b) 0.6 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 125 °C/W qJA (Note 1b) 208 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 2501NZ FDW2501NZ 13’’ 12mm 3000 units Ó2001 FDW2501NZ Rev E(W)
