FDV305N ,20V N-Channel PowerTrench MOSFETGeneral Description MOSFET20V N-Channel October 2001FDV305N
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FDW2501N ,Dual N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel 2.5V specified MOSFET is a rugged• 6 A, 20 V. R = 0.018 Ω @ V = 4.5VDS(ON) G ..
FDW2501NZ ,Dual N-Channel 2.5V Specified PowerTrench MOSFETFeatures This N -Channel 2.5V specified MOSFET is a rugged • 6 A, 20 V. R = 18 mΩ @ V = 4.5V DS(ON) ..
FDW2502P ,Dual P-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis P-Channel 2.5V specified MOSFET is a rugged• –4.4 A, –20 V. R = 0.035 Ω @ V = –4.5 VDS ..
FDW2502PZ ,Dual P-Channel 2.5V Specified PowerTrench MOSFETApplications • Load switch • High performance trench technology for extremely low RDS(ON) . • ..
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FDV305N
20V N-Channel PowerTrench MOSFET
FDV305N October 2001 FDV305N Ò Ò 20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high · 0.9 A, 20 V R = 220 m W @ V = 4.5 V DS(ON) GS voltage PowerTrench process. It has been optimized for R = 300 m W @ V = 2.5 V DS(ON) GS power management applications. · Low gate charge (11 nC typical) Applications · Load switch · Fast switching speed · Battery protection · High performance trench technology for extremely · Power management low R DS(ON) D D S G S G SOT-23 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage ± 12 V GSS I Drain Current – Continuous 0.9 A D – Pulsed 2 Maximum Power Dissipation 0.35 P D W T , T Operating and Storage Junction Temperature Range –55 to +150 °C J ST G Thermal Characteristics R Thermal Resistance, Junction-to-Ambient 357 °C/W qJA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 305 FDV305N 7’’ 8mm 3000 units Ó2001 FDV305N Rev C (W)
