FDV304P ,Digital FET, P-ChannelFeatures-25 V, -0.46 A continuous, -1.5 A Peak.This P-Channel enhancement mode field effect transis ..
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FDV304P
Digital FET, P-Channel
August 1997 FDV304P Digital FET, P-Channel General Description Features -25 V, -0.46 A continuous, -1.5 A Peak. This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS R = 1.1 W @ V = -4.5 V DS(ON) GS technology. This very high density process is tailored to minimize R = 1.5 W @ V = -2.7 V. DS(ON) GS on-state resistance at low gate drive conditions. This device is Very low level gate drive requirements allowing direct designed especially for application in battery power applications operation in 3V circuits. V < 1.5V. such as notebook computers and cellular phones. This device GS(th) has excellent on-state resistance even at gate drive voltages as Gate-Source Zener for ESD ruggedness. low as 2.5 volts. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. TM TM SuperSOT -6 SuperSOT -8 SO-8 SOIC-16 SOT-23 SOT-223 Mark:304 D S G o Absolute Maximum Ratings T = 25 C unless other wise noted A Symbol Parameter FDV304P Units V Drain-Source Voltage -25 V DSS V Gate-Source Voltage -8 V GSS I Drain Current - Continuous -0.46 A D - Pulsed -1.5 P Maximum Power Dissipation 0.35 W D T ,T Operating and Storage Temperature Range -55 to 150 °C J STG ESD Electrostatic Discharge Rating MIL-STD-883D 6.0 kV Human Body Model (100pf / 1500 Ohm) THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient 357 °C/W qJA © 1997 FDV304P Rev.E1
