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FDU3N40FairchildN/a25320avaiN-Channel UniFETTM MOSFET 400V, 2A, 3.4?


FDU3N40 ,N-Channel UniFETTM MOSFET 400V, 2A, 3.4?Applicationslamp ballasts.•LED TV• Consumer Appliances• Lighting• Uninterruptible Power SupplyDDGG ..
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FDU3N40
N-Channel UniFETTM MOSFET 400V, 2A, 3.4?
TM FDD3N40 / FDU3N40 N-Channel UniFET MOSFET March 2013 FDD3N40 / FDU3N40 TM N-Channel UniFET MOSFET 400 V, 2 A, 3.4  Features Description TM ® •R = 3.4  ( Max.) @ V = 10 V, I = 1 A UniFET MOSFET is Fairchild Semiconductor ’s high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge ( Typ. 4.5 nC) This MOSFET is tailored to reduce on-state resistance, and to •Low C ( Typ. 3.7 pF) provide better switching performance and higher avalanche rss energy strength. This device family is suitable for switching • 100% Avalanche Testes power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic Applications lamp ballasts. •LED TV • Consumer Appliances • Lighting • Uninterruptible Power Supply D D G G G D I-PAK D-PAK S S S Absolute Maximum Ratings Symbol Parameter FDD3N40 / FDU3N40 Unit V Drain-Source Voltage 400 V DSS I Drain Current - Continuous (T = 25C) A 2.0 D C - Continuous (T = 100C) A 1.25 C (Note 1) I Drain Current - Pulsed 8.0 A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 46 mJ AS I Avalanche Current (Note 1) 2 A AR E Repetitive Avalanche Energy (Note 1) 3 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25C) 30 W D C - Derate above 25C 0.24 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDD3N40 / FDU3N40 Unit R Thermal Resistance, Junction-to-Case, Max. 4.2 C/W JC R Thermal Resistance, Junction to Ambient, Max. 110 C/W JA ©2007 1 FDD3N40 / FDU3N40 Rev.C2
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