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FDS9936FAIN/a31avaiDual N-Channel Enhancement Mode Field Effect Transistor
FDS9936AFAIRCHILN/a3000avaiDual N-Channel Enhancement Mode Field Effect Transistor
FDS9936AFAIRCHILDN/a280avaiDual N-Channel Enhancement Mode Field Effect Transistor


FDS9936A ,Dual N-Channel Enhancement Mode Field Effect TransistorFeatures SO-8 N-Channel enhancement mode power field effect5.5 A, 30 V. R = 0.040 Ω @ V = 10 V, ..
FDS9936A ,Dual N-Channel Enhancement Mode Field Effect Transistorapplications such as diskused surface mount package.drive motor control, battery powered circuits w ..
FDS9945 ,60V N-Channel PowerTrench MOSFETFeatures • 3.5 A, 60 V. R = 0.100Ω @ V = 10 V DS(ON) GSThese N Channel Logic Level MOSFET have bee ..
FDS9945_NL ,60V N-Channel PowerTrench MOSFETFeatures • 3.5 A, 60 V. R = 0.100Ω @ V = 10 V DS(ON) GSThese N Channel Logic Level MOSFET have bee ..
FDS9953A ,Dual 30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –2.9 A, –30 V R = 130 mΩ @ V = –10 V D ..
FDS9953A_NL ,Dual 30V P-Channel PowerTrench MOSFETApplications • Power management • High performance trench technology for extremely low RDS(ON) • ..
FS10AS-3-T13 , High-Speed Switching Use Nch Power MOS FET
FS10AS-3-T13 , High-Speed Switching Use Nch Power MOS FET
FS10AS-3-T13 , High-Speed Switching Use Nch Power MOS FET
FS10ASJ-2-T13 , High-Speed Switching Use Nch Power MOS FET
FS10KM , Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FS10KM-06 , Nch POWER MOSFET HIGH-SPEED SWITCHING USE


FDS9936-FDS9936A
Dual N-Channel Enhancement Mode Field Effect Transistor
May 1998 FDS9936A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect 5.5 A, 30 V. R = 0.040 W @ V = 10 V, DS(ON) GS transistors are produced using Fairchild's proprietary, high R = 0.060 W @ V = 4.5 V. DS(ON) GS cell density, DMOS technology. This very high density process is especially tailored to provide superior switching High density cell design for extremely low R . DS(ON) performance and minimize on-state resistance. These devices High power and current handling capability in a widely are particularly suited for low voltage applications such as disk used surface mount package. drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients Dual MOSFET in surface mount package are needed. TM TM SOT-23 SO-8 SOT-223 SOIC-16 SuperSOT -6 SuperSOT -8 D2 5 4 D2 D1 6 3 D1 7 2 G2 S2 8 1 G1 pin 1 SO-8 S1 o Absolute Maximum Ratings T = 25 C unless other wise noted A Symbol Parameter FDS9936A Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current - Continuous (Note 1a) 5.5 A D - Pulsed 20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 Operating and Storage Temperature Range -55 to 150 °C T ,T J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W JA q R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W JC q FDS9936A Rev.B © 1998 FDS 9936A
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