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FDS9431A_F085FAIRCHILN/a5000avai-20V P-Channel 2.5V Specified MOSFET


FDS9431A_F085 ,-20V P-Channel 2.5V Specified MOSFETApplicationsDS(ON) High power and current handling capability. DC/DC converter Power management ..
FDS9431A_NL ,P-Channel 2.5V Specified MOSFETApplications High density cell design for extremely low R .DS(ON) DC/DC converter High power an ..
FDS9435A ,30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –5.3 A, –30 V R = 50 mΩ @ V = –10 V DS ..
FDS9435A_NL ,30V P-Channel PowerTrench MOSFETApplications • Power management • High performance trench technology for extremely low RDS(ON) • ..
FDS9435A_NL ,30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –5.3 A, –30 V R = 50 mΩ @ V = –10 V DS ..
FDS9435A_NL. ,30V P-Channel PowerTrench MOSFETapplications requiring a wide range of gave drive • Low gate charge voltage ratings (4.5V – 25V). ..
FRP1615 ,Ultra-fast POWER planar Rectifiers 16 A/ 50-200 V5L: DE aummu unamua 3 r” I V 3469674 FAIRCHILD SEMICONDUCTOR -. V 840 27842 n I tll-Ml-ll- FRP ..
FRP1620 ,Ultra-fast POWER planar Rectifiers 16 A/ 50-200 Vfeatures: q Ultrafast " ns Reverse Recovery Time . Soft Recovery (S > 0.5) . Low lamzc) . 1 ..
FRP2005CC ,Ultra-fast POWER planar Rectifiers 10-20 A/ 50-200 Vfeatures: >$© E o Ultrafast 35 ns Reverse Recovery Time . Soft Recovery (S > 0.5) . Low Ima ..
FRP2010CC. ,Ultra-fast POWER planar Rectifiers 10-20 A/ 50-200 VELI DEIHHE‘IEWI 0027636 l ICC”:i “‘43:“1":“':“:“‘“"':““““ L _ 3469674 FAIRCHILD SEMICONDUCTOR 84 ..
FRP2020CC ,Ultra-fast POWER planar Rectifiers 10-20 A/ 50-200 Vfeatures: >$© E o Ultrafast 35 ns Reverse Recovery Time . Soft Recovery (S > 0.5) . Low Ima ..
FRP805 ,Ultra-fast POWERplanar Rectifiers 8 A/ 50-200 Vfeatures: q Ultrafast 35 ns Recovery Time q Soft Recovery (S > 0.5) q Low Image) . 150°C Operat ..


FDS9431A_F085
-20V P-Channel 2.5V Specified MOSFET
FDS9431A_F085 P-Channel 2.5V Specified MOSFET February 2010 tm FDS9431A_F085 P-Channel 2.5V Specified MOSFET Features General Description This P-Channel 2.5V specified MOSFET is produced • -3.5 A, -20 V. R = 0.130 Ω @ V = -4.5 V DS(ON) GS using Fairchild's proprietary, high cell density, DMOS R = 0.180 Ω @ V = -2.5 V. DS(ON) GS technology. This very high density process has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Fast switching speed.  High density cell design for extremely low R . Applications DS(ON) High power and current handling capability.DC/DC converter Power management  Qualified to AEC Q101 Load switch  RoHS Compliant Battery protection D 5 4 D D D 6 3 7 2 G S 1 8 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage -20 V DSS V Gate-Source Voltage V GSS �8 (Note 1a) ID Drain Current - Continuous -3.5 A - Pulsed -18 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range -55 to +150 J stg �C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 R� �C/W JA (Note 1) R Thermal Resistance, Junction-to-Case 25 �C/W �JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS9431A FDS9431A_F085 13’’ 12mm 2500 units ©2010 1 FDS9431A_F085 Rev. A
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