FDS8962C ,30V Dual N & P-Channel PowerTrench MOSFETapplications where low in-line power R = 0.080W @ V = -4.5V loss and fast switching are require ..
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FDS8962C
30V Dual N & P-Channel PowerTrench MOSFET
February 2005 Ó2005 FDS8962C Rev A (W)
FDS8962C
Dual N & P-Channel PowerTrenchÒÒÒÒ
MOSFET
General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features Q1: N-Channel 7.0A, 30V R DS(on) = 0.030W @ VGS = 10V R DS(on) = 0.044W @ VGS = 4.5V
Q2: P-Channel -5A, -30V R DS(on) = 0.052W @ VGS = -10V R DS(on) = 0.080W @ VGS = -4.5V Fast switching speed High power and handling capability in a widely used surface mount package
SSO-8DD D1D2D2G1S2G2Pin 1
SO-8
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter Q1 Q2 Units VDSS Drain-Source Voltage 30 30 V
VGSS Gate-Source Voltage ±20 ±20 V
ID Drain Current - Continuous (Note 1a) 7 -5 A - Pulsed 20 -20
PD Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RqJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity FDS8962C FDS8962C 13” 12mm 2500 units
