FDS8882 ,30V N-Channel PowerTrench?MOSFETGeneral Description Max r = 20.0 mΩ at V = 10 V, I = 9 AThe FDS8882 has been designed to minimize ..
FDS8884 ,30V N-Channel PowerTrench?MOSFETNOITAT®FDS8884 N-Channel PowerTrench MOSFETNEMELMPIEEFebruary 2006FDS8884®N-Channel PowerTrench MOS ..
FDS8896 ,N-Channel PowerTrench?? MOSFETFeatures General Description
FDS8882
30V N-Channel PowerTrench?MOSFET
® FDS8882 N-Channel PowerTrench MOSFET December 2008 FDS8882 ® N-Channel PowerTrench MOSFET 30 V, 9 A, 20.0 mΩ Features General Description Max r = 20.0 mΩ at V = 10 V, I = 9 A The FDS8882 has been designed to minimize losses in power DS(on) GS D conversion application. Advancements in both silicon and Max r = 22.5 mΩ at V = 4.5 V, I = 8 A DS(on) GS D package technologies have been combined to offer the lowest r while maintaining excellent switching performance. DS(on) High performance trench technology for extremely low r DS(on) and fast switching Applications High power and current handling capability Notebook System Regulators Termination is Lead-free and RoHS Compliant DC/DC Converters D D G 5 4 D D D D 6 3 S 7 D 2 S G SO-8 S 8 1 S D S Pin 1 S MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous 9 I A D -Pulsed 21 E Single Pulse Avalanche Energy (Note 3) 32 mJ AS Power Dissipation T = 25 °C (Note 1a) 2.5 A P W D Power Dissipation T = 25 °C (Note 1b) 1.0 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 25 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS8882 FDS8882 SO8 13 “ 12 mm 2500 units ©2008 1 FDS8882 Rev.C
