FDS8880 ,N-Channel PowerTrench MOSFETFeatures General Description
FDS8880
N-Channel PowerTrench MOSFET
® FDS8880 N-Channel PowerTrench MOSFET April 2005 FDS8880 ® N-Channel PowerTrench MOSFET 30V, 11.6A, 10mΩ Features General Description r = 10mΩ, V = 10V, I = 11.6A This N-Channel MOSFET has been designed specifically to DS(ON) GS D improve the overall efficiency of DC/DC converters using r = 12mΩ, V = 4.5V, I = 10.7A either synchronous or conventional switching PWM DS(ON) GS D controllers. It has been optimized for low gate charge, low High performance trench technology for extremely low r and fast switching speed. DS(ON) r DS(ON) Low gate charge High power and current handling capability Applications DC/DC converters Branding Dash 5 4 6 3 5 1 7 2 2 3 8 1 4 SO-8 ©2005 1 FDS8880 Rev. A1
