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FDS8690FAIRCHILDN/a316avai30V N-Channel PowerTrench?MOSFET
FDS8690FSCN/a6157avai30V N-Channel PowerTrench?MOSFET


FDS8690 ,30V N-Channel PowerTrench?MOSFETFeatures„ Max r = 7.6mΩ, V = 10V, I = 14ADS(on) GS DThis N-Channel MOSFET has been designed specif ..
FDS8690 ,30V N-Channel PowerTrench?MOSFETApplications„ 100% R tested G„ Notebook CPU power supply„ RoHS Compliant„ Synchronous re ..
FDS8813NZ ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild „ Max r = 4.5mΩ at V = 10V, I ..
FDS8813NZ ,30V N-Channel PowerTrench?MOSFETapplications common in Notebook Computers and „ High power and current handling capability Portable ..
FDS8817NZ ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild „ Max r = 7mΩ at V = 10V, I = ..
FDS8817NZ ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild „ Max r = 7mΩ at V = 10V, I = ..
FR604 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 6.0A
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FR804 , FAST RECOVERY GLASS PASSIVATED RECTIFIER (VOLTAGE RANGE 50 to 800 Volts CURRENT 8.0 Amperes)
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FDS8690
30V N-Channel PowerTrench?MOSFET
N O I T A T ® FDS8690 N-Channel PowerTrench MOSFET N E M E L MP I E E January 2006 FDS8690 ® N-Channel PowerTrench MOSFET 30V, 14A, 7.6mΩ General Description Features „ Max r = 7.6mΩ, V = 10V, I = 14A DS(on) GS D This N-Channel MOSFET has been designed specifically to „ Max r = 11.4mΩ, V = 4.5V, I = 11.5A DS(on) GS D improve the overall efficiency of DC/DC converters using „ High performance trench technology for extremely low either synchronous or conventional switching PWM r and fast switching DS(on) controllers. It has been optimized for low gate charge, low „ Very low gate charge r and fast switching speed. DS(on) „ High power and current handling capability Applications „ 100% R tested G „ Notebook CPU power supply „ RoHS Compliant „ Synchronous rectifier Absolute Maximum Ratings T = 25°C unless otherwise Noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Note 1a) 14 I A D -Pulsed 100 E Single Pulse Avalanche Energy (Note 3) 210 mJ AS P Power Dissipation for Single Operation (Note 1a) 2.5 D (Note 1b) 1.2 W (Note 1c) 1.0 T , T Operating and Storage Temperature -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Ambient (Note 1a) 50 °C/W θJA R Thermal Resistance, Junction to Case (Note 1) 25 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS8690 FDS8690 13” 12mm 2500 units ©2006 1 FDS8690 Rev. B R F D A E L
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