FDS8670 ,30V N-Channel PowerTrench?MOSFETFeatures This device has been designed specifically to improve • 21 A, 30 V Max R = 3.7 mΩ @ V = 1 ..
FDS8670 ,30V N-Channel PowerTrench?MOSFETApplications • High Efficiency DC-DC Converters: • Notebook Vcore Power Supply • Telecom Brick Sync ..
FDS8672S General Description Max r = 4.8mΩ at V = 10V, I = 18A The FDS8672S is designed to replace a single ..
FDS8690 ,30V N-Channel PowerTrench?MOSFETFeatures Max r = 7.6mΩ, V = 10V, I = 14ADS(on) GS DThis N-Channel MOSFET has been designed specif ..
FDS8690 ,30V N-Channel PowerTrench?MOSFETApplications 100% R tested G Notebook CPU power supply RoHS Compliant Synchronous re ..
FDS8813NZ ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild Max r = 4.5mΩ at V = 10V, I ..
FR304 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 3.0A
FR305 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 3.0A
FR604 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 6.0A
FR606 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 6.0A
FR607 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 6.0A
FR804 , FAST RECOVERY GLASS PASSIVATED RECTIFIER (VOLTAGE RANGE 50 to 800 Volts CURRENT 8.0 Amperes)
FDS8670
30V N-Channel PowerTrench?MOSFET
® FDS8670 30V N-Channel PowerTrench MOSFET August 2006 tm FDS8670 ® 30V N-Channel PowerTrench MOSFET General Description Features This device has been designed specifically to improve • 21 A, 30 V Max R = 3.7 mΩ @ V = 10 V DS(ON) GS the efficiency of DC-DC converters. Using new Max R = 5.0 mΩ @ V = 4.5 V DS(ON) GS techniques in MOSFET construction, the various components of gate charge and capacitance have been • High performance trench technology for extremely low optimized to reduce switching losses. Low gate R and gate charge DS(ON) resistance and very low Miller charge enable excellent • Minimal Qgd (5.5 nC typical) performance with both adaptive and fixed dead time • 100% R tested (0.9 Ω typical) gate drive circuits. Very low Rds(on) has been G maintained to provide an extremely versatile device. • RoHS Compliant Applications • High Efficiency DC-DC Converters: • Notebook Vcore Power Supply • Telecom Brick Synchronous Rectifier • Multi purpose Point Of Load D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage GSS ±20 V I Drain Current – Continuous (Note 1a) 21 A D – Pulsed 105 P Power Dissipation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 R °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 25 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS8670 FDS8670 13’’ 12mm 2500 units FDS8670 Rev C (W) ©2005
