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FDS86242FAIRCHILN/a4000avai150V N-Channel PowerTrench?MOSFET


FDS86242 ,150V N-Channel PowerTrench?MOSFETApplicationssurface mount package„ DC/DC converters and Off-Line UPS„ 100% UIL Tested„ Distributed ..
FDS8670 ,30V N-Channel PowerTrench?MOSFETFeatures This device has been designed specifically to improve • 21 A, 30 V Max R = 3.7 mΩ @ V = 1 ..
FDS8670 ,30V N-Channel PowerTrench?MOSFETApplications • High Efficiency DC-DC Converters: • Notebook Vcore Power Supply • Telecom Brick Sync ..
FDS8672S General Description„ Max r = 4.8mΩ at V = 10V, I = 18A The FDS8672S is designed to replace a single ..
FDS8690 ,30V N-Channel PowerTrench?MOSFETFeatures„ Max r = 7.6mΩ, V = 10V, I = 14ADS(on) GS DThis N-Channel MOSFET has been designed specif ..
FDS8690 ,30V N-Channel PowerTrench?MOSFETApplications„ 100% R tested G„ Notebook CPU power supply„ RoHS Compliant„ Synchronous re ..
FR304 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 3.0A
FR305 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 3.0A
FR604 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 6.0A
FR606 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 6.0A
FR607 , Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 6.0A
FR804 , FAST RECOVERY GLASS PASSIVATED RECTIFIER (VOLTAGE RANGE 50 to 800 Volts CURRENT 8.0 Amperes)


FDS86242
150V N-Channel PowerTrench?MOSFET
® FDS86242 N-Channel PowerTrench MOSFET August 2010 FDS86242 ® N-Channel PowerTrench MOSFET 150 V, 4.1 A, 67 mΩ Features General Description „ Max r = 67 mΩ at V = 10 V, I = 4.1 A DS(on) GS D This N-Channel MOSFET is produced using Fairchild ® Semiconductor‘s advanced Power Trench process that has „ Max r = 98 mΩ at V = 6 V, I = 3.3 A DS(on) GS D been optimized for r , switching performance and DS(on) „ High performance trench technology for extremely low r DS(on) ruggedness. „ High power and current handling capability in a widely used Applications surface mount package „ DC/DC converters and Off-Line UPS „ 100% UIL Tested „ Distributed Power Architectures and VRMs „ RoHS Compliant „ Primary Switch for 24V and 48V Systems „ High Voltage Synchronous Rectifier D D 4 G D 5 D 6 S D D 3 7 2 S D G SO-8 S 8 1 D S S Pin 1 S MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 150 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous 4.1 I A D -Pulsed 20 E Single Pulse Avalanche Energy (Note 3) 40 mJ AS Power Dissipation T = 25 °C (Note 1) 5.0 C P W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 25 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS86242 FDS86242 SO-8 13 ’’ 12 mm 2500 units ©2010 1 FDS86242 Rev. C
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