FDS7766_NL ,30V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching ..
FDS7779Z ,30V P-Channel PowerTrench MOSFETFDS7779Z October 2003 FDS7779Z 30 Volt P-Channel PowerTrench MOSFET
FDS7779Z ,30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET has been designed • –16 A, –30 V. R = 7.2 mΩ @ V = –10 V DS(ON) GSsp ..
FDS7779Z_NL ,30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET has been designed • –16 A, –30 V. R = 7.2 mΩ @ V = –10 V DS(ON) GSsp ..
FDS7788 ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 18 A, 30 V. R = 4.0 mΩ @ V = 10 VDS(ON) GSspecif ..
FDS7788_NL ,30V N-Channel PowerTrench MOSFETFDS7788February 2005FDS7788Ò30V N-Channel PowerTrench MOSFET
FR2024 , Dyad
FR207 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
FR207 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
FR207 , FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
FR207-TB ,Top Electronics - 2.0A FAST RECOVERY RECTIFIER
FR210 , 2.0 Amp FAST RECOVERY PLASTIC RECTIFIERS
FDS7766_NL
30V N-Channel PowerTrench MOSFET
FDS7766 March 2003 FDS7766 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 17 A, 30 V R = 5 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 6 mΩ @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • High performance trench technology for extremely “low side” synchronous rectifier operation, providing an extremely low R in a small package. low R DS(ON) DS(ON) Applications • High power and current handling capability • Synchronous rectifier • Fast switching • DC/DC converter D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±16 V GSS I Drain Current – Continuous (Note 1a) 17 A D – Pulsed 60 Power Dissipation for Single Operation (Note 1a) 2.5 P W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 R °C/W θJA R Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS7766 FDS7766 13’’ 12mm 2500 units FDS7766 Rev E (W) 2003
