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FDS7088N3FSC ?N/a10avai30V N-Channel PowerTrench MOSFET


FDS7088N3 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 21 A, 30 V R = 4 mΩ @ V = 10 V DS(ON) GSspecif ..
FDS7088N7 ,30V N-Channel. PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 23 A, 30 V R = 3 mΩ @ V = 10 V DS(ON) GSspecif ..
FDS7088SN3 ,30V N-Channel PowerTernch SyncFETFeatures The FDS7088SN3 is designed to replace a single SO-8 • 21 A, 30 V R = 4.0 mΩ @ V = 10 V D ..
FDS7096N3 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 14 A, 30 V R = 9 mΩ @ V = 10 V DS(ON) GSspec ..
FDS7098N3 ,30V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • DC/DC converter • Fast switching • Pow ..
FDS7288N3 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET in the thermally enhanced • 20.5 A, 30 V R = 4.5 mΩ @ V = 10 V DS( ..
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FDS7088N3
30V N-Channel PowerTrench MOSFET
FDS7088N3 February 2004 FDS7088N3  30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 21 A, 30 V R = 4 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 5 mΩ @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • High performance trench technology for extremely “low side” synchronous rectifier operation, providing an extremely low R in a small package. DS(ON) low R DS(ON) Applications • High power and current handling capability • Synchronous rectifier • Fast switching • DC/DC converter • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Bottom-side Drain Contact 5 4 6 3 7 2 8 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 GSS I Drain Current – Continuous (Note 1a) 21 A D – Pulsed 60 Power Dissipation for Single Operation (Note 1a) 3.0 P W D (Note 1b) 1.5 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 0.5 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS7088N3 FDS7088N3 13’’ 12mm 2500 units FDS7088N3 Rev D1 (W) 2004
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