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FDS6993FAIRCHILDN/a260avaiDual P-Channel PowerTrench MOSFET
FDS6993_NL |FDS6993NLFAIRCHILDN/a445avaiDual P-Channel PowerTrench MOSFET


FDS6993_NL ,Dual P-Channel PowerTrench MOSFETFDS6993 June 2003 FDS6993 ÒDual P-Channel PowerTrench MOSFET
FDS6994S ,Dual Notebook Power Supply N-Channel PowerTrench SyncFET TMFeatures The FDS6994S is designed to replace two single SO-8 • Q2: Optimized to minimize conductio ..
FDS6994S_NL ,Dual Notebook Power Supply N-Channel PowerTrench SyncFETFeatures The FDS6994S is designed to replace two single SO-8 • Q2: Optimized to minimize conductio ..
FDS7060N7 ,30V N-Channel PowerTrench MOSFETGeneral Description MOSFETChannel PowerTrenchFebruary 2002 FDS7060N7 T = 25°C unless otherwise note ..
FDS7064A ,30V N-Channel PowerTrench MOSFETApplications• Fast switching• Synchronous rectifier• Bottomless

FDS6993-FDS6993_NL
Dual P-Channel PowerTrench MOSFET
FDS6993 June 2003 FDS6993 Ò Dual P-Channel PowerTrench MOSFET General Description Features · Q1: P-Channel These P-Channel MOSFETs are made Ò using FSC’s PowerTrench technology. –4.3A, –30V R = 55mW @ V = –10V DS(on) GS They are packaged in a single SO-8 which is R = 85mW @ V = –4.5V DS(on) GS designed to allow two MOSFETs to operate · Q2: P-Channel independenly, each with it’s own heat sink. –6.8A, –12V R = 17mW @ V = –4.5V The combination of silicon and package DS(on) GS technologies results in minimum board R = 24mW @ V = –2.5V DS(on) GS space and cost. R = 30mW @ V = –1.8V DS(on) GS · High power and handling capability in a widely used surface mount package D2 D 5 4 D2 D D1 D Q2 6 3 D1 D 7 2 G2 SO-8 Q1 S2 G 8 1 G1 S S1 S Pin 1 SO-8 S Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain-Source Voltage –30 –12 V DSS V Gate-Source Voltage ±25 ±8 V GSS I Drain Current - Continuous (Note 1a) –4.3 –6.8 A D - Pulsed –20 –20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 R °C/W qJA Thermal Resistance, Junction-to-Case (Note 1) 40 R °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6993 FDS6993 13” 12mm 2500 units FDS6993 Rev C (W) Ó2003
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