FDS6990A ,Dual N-Channel Logic Level PowerTrench TM TM MOSFETGeneral Description
FDS6990A. ,Dual N-Channel Logic Level PowerTrench TM TM MOSFETFeaturesThese N-Channel Logic Level MOSFETs are7.5 A, 30 V. R = 0.018 Ω @ V = 10 V DS(O ..
FDS6990A_NL ,Dual N-Channel Logic Level PowerTrench MOSFETapplications where low in-line power• High performance trench technology for extremelyloss and fast ..
FDS6990A_NL. ,Dual N-Channel Logic Level PowerTrench MOSFETFeaturesThese N-Channel Logic Level MOSFETs are produced • 7.5 A, 30 V. R = 18 mΩ @ V = 10 VDS(ON) ..
FDS6990AS General Description 7.5 A, 30 V. R = 22 mΩ @ V = 10 V The FDS6990AS is designed to replace a dual S ..
FDS6990AS ®FDS6990AS Dual 30V N-Channel PowerTrench SyncFET™ ..
FQU2N60 ,600V N-Channel MOSFET
FQU2N60 ,600V N-Channel MOSFET
FQU2N60C ,600V N-Channel MOSFETFQD2N60C / FQU2N60CTMQFETFQD2N60C / FQU2N60C600V N-Channel MOSFET
FQU2N60C ,600V N-Channel MOSFETFQD2N60C / FQU2N60CTMQFETFQD2N60C / FQU2N60C600V N-Channel MOSFET
FQU2N60C ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 1.9A, 600V, R = 4.7Ω @V = 10 VDS(on) ..
FQU2N60C ,600V N-Channel MOSFETFQD2N60C / FQU2N60CTMQFETFQD2N60C / FQU2N60C600V N-Channel MOSFET
FDS6990A-FDS6990A.
Dual N-Channel Logic Level PowerTrench TM TM MOSFET
June 1999 FDS6990A TM TM Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are 7.5 A, 30 V. R = 0.018 W @ V = 10 V DS(ON) GS R = 0.023 W @ V = 4.5 V. produced using Fairchild Semiconductor's DS(ON) GS advanced PowerTrench process that has been Fast switching speed. especially tailored to minimize the on-state Low gate charge (typical 18nC). resistance and yet maintain superior switching performance. High performance trench technology for extremely low R . These devices are well suited for low voltage and DS(ON) battery powered applications where low in-line High power and current handling capability. power loss and fast switching are required. TM TM SOIC-16 SOT-23 SuperSOT -6 SuperSOT -8 SO-8 SOT-223 D2 5 4 D2 D1 6 3 D1 7 2 G2 S2 1 8 1 G1 pin SO-8 S1 o Absolute Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units Drain-Source Voltage 30 V V DSS Gate-Source Voltage ±20 V V GSS Drain Current - Continuous (Note 1a) 7.5 A I D - Pulsed 20 Power Dissipation for Single Operation (Note 1a) 2 W P D (Note 1b) 1.6 (Note 1c) 0.9 Operating and Storage Temperature Range -55 to 150 °C T ,T J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W R qJA Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W R qJC ©1999 Fairchild Semiconductor FDS6990A Rev.C1 FDS 6990A
