FDS6990 ,Dual N-Channel Logic Level PowerTrenchTM MOSFETFDS6990S May 2001 FDS6990S Ò ™Dual 30V N-Channel PowerTrench SyncFET
FDS6990 ,Dual N-Channel Logic Level PowerTrenchTM MOSFETApplications • High power and current handling capability• DC/DC converter • Motor drives D1D5 4D ..
FDS6990 ,Dual N-Channel Logic Level PowerTrenchTM MOSFETFeatures The FDS6990S is designed to replace a dual SO-8 • 7.5A, 30 V. R = 22 mΩ @ V = 10 V DS(ON) ..
FDS6990A ,Dual N-Channel Logic Level PowerTrench TM TM MOSFETGeneral Description
FDS6990A. ,Dual N-Channel Logic Level PowerTrench TM TM MOSFETFeaturesThese N-Channel Logic Level MOSFETs are7.5 A, 30 V. R = 0.018 Ω @ V = 10 V DS(O ..
FDS6990A_NL ,Dual N-Channel Logic Level PowerTrench MOSFETapplications where low in-line power• High performance trench technology for extremelyloss and fast ..
FQU20N06LTU ,60V N-Channel Logic level QFETFeaturesThese N-Channel enhancement mode power field effect • 17.2A, 60V, R = 0.06Ω @ V = 10VDS(on) ..
FQU2N100 ,1000V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect • 1.6A, 1000V, R = 9Ω @V = 10 VDS(on) G ..
FQU2N40 ,400V N-Channel MOSFET
FQU2N60 ,600V N-Channel MOSFET
FQU2N60 ,600V N-Channel MOSFET
FQU2N60 ,600V N-Channel MOSFET
FDS6990
Dual N-Channel Logic Level PowerTrenchTM MOSFET
FDS6990S May 2001 FDS6990S Ò ™ Dual 30V N-Channel PowerTrench SyncFET General Description Features The FDS6990S is designed to replace a dual SO-8 · 7.5A, 30 V. R = 22 mW @ V = 10 V DS(ON) GS MOSFET and two Schottky diodes in synchronous R = 30 mW @ V = 4.5 V DS(ON) GS DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a · Includes SyncFET Schottky diode low R and low gate charge. Each MOSFET DS(ON) includes integrated Schottky diodes using Fairchild’s monolithic SyncFET technology. The performance of · Low gate charge (11 nC typical) the FDS6990S as the low-side switch in a synchronous rectifier is similar to the performance of the FDS6990A · High performance trench technology for extremely low in parallel with a Schottky diode. R DS(ON) Applications · High power and current handling capability · DC/DC converter · Motor drives D1 D 5 4 D1 D Q1 D2 D 6 3 D2 D 7 2 Q2 G1 SO-8 G S1 8 1 S G2 S S2 SO-8 S Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) 7.5 A D – Pulsed 20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W qJA Thermal Resistance, Junction-to-Case (Note 1) 40 R °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6990S FDS6990S 13’’ 12mm 2500 units FDS6990S Rev B(W) Ó2001
