FDS6984AS Features The FDS6984AS is designed to replace two single • Q2: Optimized to minimize conduction l ..
FDS6984S ,Dual Notebook Power Supply N-Channel PowerTrench SyncFET TMFeaturesThe FDS6984S is designed to replace two single SO-8 • Q2: Optimized to minimize conduction ..
FDS6984S_NL ,Dual Notebook Power Supply N-Channel PowerTrench SyncFetElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Type Mi ..
FDS6986AS ,Dual Notebook Power Supply N-Channel PowerTrench SyncFETFeatures The FDS6986AS is designed to replace two single SO- • Q2: Optimized to minimize conduction ..
FDS6986S ,Dual Notebook Power Supply N-Channel PowerTrench SyncFET TMFeatures The FDS6986S is designed to replace two single SO-8 • Q2: Optimized to minimize conductio ..
FDS6986S_NL ,Dual Notebook Power Supply N-Channel PowerTrench SyncFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Type ..
FQT4N20 ,200V N-Channel MOSFETFQT4N20May 2001TMQFETFQT4N20200V N-Channel MOSFET
FQT4N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 0.85A, 200V, R = 1.35Ω @V = 10 VDS(on ..
FQT4N20LTF ,200V N-Channel Logic Level QFETFeaturesThese N-Channel enhancement mode power field effect • 0.85A, 200V, R = 1.35Ω @V = 10 VDS(on ..
FQT4N20TF ,200V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect • 0.85A, 200V, R = 1.4Ω @V = 10 VDS(on) ..
FQT4N25 ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 0.83A, 250V, R = 1.75Ω @V = 10 VDS(on ..
FQT5P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FDS6984AS
FDS6984AS J May 2008 FDS6984AS ® ™ Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6984AS is designed to replace two single • Q2: Optimized to minimize conduction losses SO-8 MOSFETs and Schottky diode in synchronous Includes SyncFET Schottky diode DC:DC power supplies that provide various peripheral 8.5A, 30V R max= 20 mΩ @ V = 10V DS(on) GS voltages for notebook computers and other battery powered electronic devices. FDS6984AS contains two R max= 28 mΩ @ V = 4.5V DS(on) GS unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion • Q1: Optimized for low switching losses efficiency. Low gate charge (8nC typical) The high-side switch (Q1) is designed with specific 5.5A, 30V R max= 31 mΩ @ V = 10V DS(on) GS emphasis on reducing switching losses while the low- R max= 40 mΩ @ V = 4.5V side switch (Q2) is optimized to reduce conduction DS(on) GS losses. Q2 also includes a patented combination of a MOSFET monolithically integrated with a Schottky • RoHS Compliant diode. D1 5 4 D1 D2 Q1 6 3 D2 7 2 Q2 G1 8 1 S1 SO-8 G2 S2 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Q2 Q1 Units V Drain-Source Voltage 30 30 V DSS V Gate-Source Voltage ±20 ±20 V GSS I Drain Current - Continuous (Note 1a) 8.5 5.5 A D - Pulsed 30 20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 R °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 40 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6984AS FDS6984AS 13” 12mm 2500 units FDS6984AS Rev A1(X) ©2008
