FDS6982AS ,30V Dual Notebook Power Supply N-Channel PowerTrench SyncFetFeatures The FDS6982AS is designed to replace two single SO-• Q2: Optimized to minimize conduction ..
FDS6982S ,Dual Notebook Power Supply N-Channel PowerTrench SyncFet TMFeaturesThe FDS6982S is designed to replace two single SO-8 • Q2: Optimized to minimize conduction ..
FDS6982S_NL ,Dual Notebook Power Supply N-Channel PowerTrench SyncFetFeaturesThe FDS6982S is designed to replace two single SO-8 • Q2: Optimized to minimize conduction ..
FDS6984AS Features The FDS6984AS is designed to replace two single • Q2: Optimized to minimize conduction l ..
FDS6984S ,Dual Notebook Power Supply N-Channel PowerTrench SyncFET TMFeaturesThe FDS6984S is designed to replace two single SO-8 • Q2: Optimized to minimize conduction ..
FDS6984S_NL ,Dual Notebook Power Supply N-Channel PowerTrench SyncFetElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Type Mi ..
FQPF9P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -6.0A, -250V, R = 0.62Ω @V = -10 VDS( ..
FQS4903TF ,500V Dual N-Channel QFET
FQT13N06L ,60V LOGIC N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQT13N06LTF ,60V N-Channel Logic level QFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQT13N06TF ,60V N-Channel QFETapplications such as DC/DCconverters, high efficiency switching for powermanagement in portable and ..
FQT1N60C ,N-Channel QFET?MOSFET 600V, 0.2A, 11.5?FeaturesThis N-Channel enhancement mode power MOSFET is •0.2 A, 600 V, R =9.3 Ω(.)7\S @V =10 V, I = ..
FDS6982AS
30V Dual Notebook Power Supply N-Channel PowerTrench SyncFet
FDS6982AS March 2005 FDS6982AS ® ™ Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6982AS is designed to replace two single SO- • Q2: Optimized to minimize conduction losses 8 MOSFETs and Schottky diode in synchronous Includes SyncFET Schottky body diode DC:DC power supplies that provide various peripheral 8.6A, 30V R max= 13.5mΩ @ V = 10V DS(on) GS voltages for notebook computers and other battery powered electronic devices. FDS6982AS contains two R max= 16.5mΩ @ V = 4.5V DS(on) GS unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion • Low gate charge (21nC typical) efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while • Q1: Optimized for low switching losses the low-side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated 6.3A, 30V R max= 22.0mΩ @ V = 10V Schottky diode using Fairchild’s monolithic SyncFET DS(on) GS technology. R max= 29.0mΩ @ V = 4.5V DS(on) GS Applications • Low gate charge (11nC typical) • Notebook D1 5 4 D1 D2 Q1 6 3 D2 7 2 Q2 G1 8 1 S1 SO-8 G2 S2 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Q2 Q1 Units V Drain-Source Voltage 30 30 V DSS V Gate-Source Voltage ±20 ±20 V GSS I Drain Current - Continuous (Note 1a) 8.6 6.3 A D - Pulsed 30 20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 R °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6982AS FDS6982AS 13” 12mm 2500 units FDS6982AS FDS6982AS_NL (Note 4) 13” 12mm 2500 units FDS6982AS FDS6982AS_NF40 (Note 5) 13” 12mm 2500 units FDS6982AS Rev A1(X) ©2005
