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FDS6982FAIRCHILDN/a7065avaiDual N-Channel, Notebook Power Supply MOSFET


FDS6982 ,Dual N-Channel, Notebook Power Supply MOSFETFeaturesThis part is designed to replace two single SO-8 MOSFETs• Q2: 8.6A, 30V. R = 0.015 Ω @ V ..
FDS6982_NL ,Dual N-Channel Notebook Power Supply MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Ty ..
FDS6982_NL ,Dual N-Channel Notebook Power Supply MOSFETApplications• Battery powered synchronous DC:DC converters.• Embedded DC:DC conversion.D1D15 4Q1D2D ..
FDS6982AS ,30V Dual Notebook Power Supply N-Channel PowerTrench SyncFetFeatures The FDS6982AS is designed to replace two single SO-• Q2: Optimized to minimize conduction ..
FDS6982S ,Dual Notebook Power Supply N-Channel PowerTrench SyncFet TMFeaturesThe FDS6982S is designed to replace two single SO-8 • Q2: Optimized to minimize conduction ..
FDS6982S_NL ,Dual Notebook Power Supply N-Channel PowerTrench SyncFetFeaturesThe FDS6982S is designed to replace two single SO-8 • Q2: Optimized to minimize conduction ..
FQPF9N30 ,300V N-Channel MOSFETMay 2000TMQFET QFET QFET QFETFQPF9N30300V N-Channel MOSFET
FQPF9N30 ,300V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 6.0A, 300V, R = 0.45Ω @V = 10 VDS(on) ..
FQPF9N30 ,300V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 6.0A, 300V, R = 0.45Ω @V = 10 VDS(on) ..
FQPF9N50 ,500V N-Channel MOSFET
FQPF9N50 ,500V N-Channel MOSFET
FQPF9P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect  -6.0A, -250V, R = 0.62Ω @V = -10 VDS( ..


FDS6982
Dual N-Channel, Notebook Power Supply MOSFET
FDS6982 June 1999 FDS6982 Dual N-Channel, Notebook Power Supply MOSFET General Description Features This part is designed to replace two single SO-8 MOSFETs • Q2: 8.6A, 30V. R = 0.015 Ω @ V = 10V DS(on) GS in synchronous DC:DC power supplies that provide the R = 0.020 Ω @ V = 4.5V various peripheral voltage rails required in notebook DS(on) GS computers and other battery powered electronic devices. • Q1: 6.3A, 30V. R = 0.028 Ω @ V = 10V DS(on) GS FDS6982 contains two unique 30V, N-channel, logic level, R = 0.035 Ω @ V = 4.5V PowerTrench MOSFETs designed to maximize power DS(on) GS conversion efficiency. • Fast switching speed. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side • High performance trench technology for extremely switch (Q2) is optimized for low conduction losses (less low R . DS(ON) than 20mΩ at V = 4.5V). GS Applications • Battery powered synchronous DC:DC converters. • Embedded DC:DC conversion. D1 D1 5 4 Q1 D2 D2 6 3 7 2 G1 Q2 S1 SO-8 G2 8 1 pin 1 S2 T = 25°C unless otherwise noted Absolute Maximum Ratings A Symbol Parameter Q2 Q1 Units V Drain-Source Voltage 30 30 V DSS V Gate-Source Voltage 20 20 V GSS ± ± (Note 1a) I Drain Current - Continuous 8.6 6.3 A D - Pulsed 30 20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C ° Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W JA ° θ R Thermal Resistance, Junction-to-Case (Note 1) 40 C/W JC ° θ Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS6982 FDS6982 13” 12mm 2500 units 1999 FDS6982, Rev. D1
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