FDS6912A ,Dual N-Channel, Logic Level, PowerTrench TM MOSFETFeatures6 A, 30 V. R = 0.028 Ω @ V = 10 V These N-Channel Logic Level MO ..
FDS6912A_NL ,Dual N-Channel Logic Level PowerTrench MOSFETapplications where low in-line power• High performance trench technology for extremelyloss and fast ..
FDS6930A ,Dual N-Channel, Logic Level, PowerTrench TM MOSFETFeaturesDescription General N-CDualDS693 October ..
FDS6930B ,30V Dual N-Channel Logic Level PowerTrench?MOSFETGeneral Description 5.5 A, 30 V. R = 38 mΩ @ V = 10 V These N-Channel Logic Level MOSFETs are produ ..
FDS6961 ,Dual N-Channel Logic Level PowerTrenchTM MOSFETFeaturesDescriptionGeneral MOSFET Logic LevelDS6961OAV Vo oI C CΔ / Δ TJI V V 1 µ AT µ AI VI V) ..
FDS6961A ,Dual N-Channel Logic Level PowerTrench TM MOSFETFeaturesDescriptionGeneral MOSFET Logic LevelDS6961OAV Vo oI C CΔ / Δ TJI V V 1 µ AT µ AI VI V) ..
FQPF50N06L ,60V LOGIC N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQPF5N30 ,300V N-Channel MOSFET
FQPF5N30 ,300V N-Channel MOSFET
FQPF5N50CF ,500V N-Channel QFET?C-SeriesFQPF5N50CF 500V N-Channel MOSFETTMFRFETFQPF5N50CF 500V N-Channel MOSFET
FQPF5N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQPF5N80800V N-Channel MOSFET
FQPF5N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.8A, 800V, R = 2.6Ω @V = 10 VDS(on) ..
FDS6912A
Dual N-Channel, Logic Level, PowerTrench TM MOSFET
June 1998 FDS6912A TM Dual N-Channel, Logic Level, PowerTrench MOSFET General Description Features 6 A, 30 V. R = 0.028 W @ V = 10 V These N-Channel Logic Level MOSFETs are DS(ON) GS R = 0.035 W @ V = 4.5 V. produced using Fairchild Semiconductor's DS(ON) GS advanced PowerTrench process that has been Fast switching speed. especially tailored to minimize the on-state Low gate charge (typical 9 nC). resistance and yet maintain superior switching performance. High performance trench technology for extremely low These devices are well suited for low voltage and R . DS(ON) battery powered applications where low in-line High power and current handling capability. power loss and fast switching are required. TM TM SOIC-16 SOT-23 SuperSOT -6 SuperSOT -8 SO-8 SOT-223 D2 5 4 D2 D1 D1 6 3 2 7 G2 S2 1 G1 8 pin 1 SO-8 S1 o Absolute Maximum Ratings T = 25 C unless other wise noted A Symbol Parameter FDS6912A Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current - Continuous (Note 1a) 6 A D - Pulsed 20 P Power Dissipation for Single Operation (Note 1a) 2 W D (Note 1b) 1.6 (Note 1c) 0.9 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W qJA Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W R qJC © 1998 FDS6912A Rev.C FDS 6912A
