FDS6912A_NL ,Dual N-Channel Logic Level PowerTrench MOSFETapplications where low in-line power• High performance trench technology for extremelyloss and fast ..
FDS6930A ,Dual N-Channel, Logic Level, PowerTrench TM MOSFETFeaturesDescription General N-CDualDS693 October ..
FDS6930B ,30V Dual N-Channel Logic Level PowerTrench?MOSFETGeneral Description 5.5 A, 30 V. R = 38 mΩ @ V = 10 V These N-Channel Logic Level MOSFETs are produ ..
FDS6961 ,Dual N-Channel Logic Level PowerTrenchTM MOSFETFeaturesDescriptionGeneral MOSFET Logic LevelDS6961OAV Vo oI C CΔ / Δ TJI V V 1 µ AT µ AI VI V) ..
FDS6961A ,Dual N-Channel Logic Level PowerTrench TM MOSFETFeaturesDescriptionGeneral MOSFET Logic LevelDS6961OAV Vo oI C CΔ / Δ TJI V V 1 µ AT µ AI VI V) ..
FDS6961A_NL ,Dual N-Channel Logic Level PowerTrench MOSFETFeaturesDescriptionGeneral MOSFET Logic LevelDS6961OAV Vo oI C CΔ / Δ TJI V V 1 µ AT µ AI VI V) ..
FQPF5N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQPF5N80800V N-Channel MOSFET
FQPF5N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.8A, 800V, R = 2.6Ω @V = 10 VDS(on) ..
FQPF5N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.8A, 800V, R = 2.6Ω @V = 10 VDS(on) ..
FQPF5N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 3.0A, 900V, R = 2.3 Ω @ V = 10 VDS(on ..
FQPF5P20 ,200V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effect
FQPF65N06 ,60V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 40A, 60V, R = 0.016 Ω @ V = 10 VDS(on ..
FDS6912A_NL
Dual N-Channel Logic Level PowerTrench MOSFET
FDS6912A July 2003 FDS6912A Ò Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced · 6 A, 30 V. R = 28 mW @ V = 10 V DS(ON) GS using Fairchild Semiconductor’s advanced R = 35 mW @ V = 4.5 V DS(ON) GS PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain · Fast switching speed superior switching performance. · Low gate charge These devices are well suited for low voltage and battery powered applications where low in-line power · High performance trench technology for extremely loss and fast switching are required. low R DS(ON) · High power and current handling capability D1 D 5 4 D1 D D2 D Q1 6 3 D2 D 7 2 G1 SO-8 Q2 G S1 8 1 S G2 S S2 SO-8 S Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS ± 20 I Drain Current – Continuous (Note 1a) 6 A D – Pulsed 20 P W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6912A FDS6912A 13’’ 12mm 2500 units Ó2003 FDS6912A Rev D(W)
