FDS6900AS Features The FDS6900AS is designed to replace two single SO- • Q2: Optimized to minimize conduction ..
FDS6900S ,Dual N-Channel PowerTrench SyncFETFeatures The FDS6900S is designed to replace two single SO-8 • Q2: Optimized to minimize conductio ..
FDS6900S_NL ,Dual N-Channel PowerTrench SyncFETFeatures The FDS6900S is designed to replace two single SO-8 • Q2: Optimized to minimize conductio ..
FDS6910 ,30V Dual N-Channel Logic Level PowerTrench MOSFETFeatures These N-Channel Logic Level MOSFETs are produced • 7.5 A, 30 V. R = 13 mΩ @ V = 10 V DS(ON ..
FDS6910_NL ,30V Dual N-Channel Logic Level PowerTrench MOSFETFDS6910 September 2004 FDS6910 Dual N-Channel Logic Level PowerTrench MOSFET
FDS6911 ,20V Dual N-Channel Logic Level PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FQPF3N90 ,900V N-Channel MOSFETSeptember 2000TMQFET QFET QFET QFETFQPF3N90900V N-Channel MOSFET
FQPF3N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.1A, 900V, R = 4.25 Ω @ V = 10 VDS(o ..
FQPF3P20 ,QFET P-CHANNELFEATURESBV = - 200VDSS• Advanced New DesignR = 2.7ΩDS(ON)• Avalanche Rugged TechnologyI = - 2.2AD• ..
FQPF3P20 ,QFET P-CHANNELQFET P-CHANNEL FQPF3P20
FQPF44N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQPF45N15V2 ,150V N-Channel Advanced QFET V2 seriesapplications lowest Rds(on) is required.D!!!!!!!!● ●● ●● ●● ●◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀▲▲▲▲▲▲▲▲● ●● ●● ●● ●G!! ..
FDS6900AS
FDS6900AS May 2005 FDS6900AS ® ™ Dual N-Ch PowerTrench SyncFET General Description Features The FDS6900AS is designed to replace two single SO- • Q2: Optimized to minimize conduction losses 8 MOSFETs and Schottky diode in synchronous DC:DC Includes SyncFET Schottky body diode power supplies that provide various peripheral voltages 8.2A, 30V R = 22mΩ @ V = 10V DS(on) GS for notebook computers and other battery powered electronic devices. FDS6900AS contains two unique R = 28mΩ @ V = 4.5V DS(on) GS 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. • Q1: Optimized for low switching losses Low Gate Charge (11nC typical) The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low- 6.9A, 30V R = 27mΩ @ V = 10V DS(on) GS side switch (Q2) is optimized to reduce conduction R = 34mΩ @ V = 4.5V losses. Q2 also includes an integrated Schottky diode DS(on) GS using Fairchild’s monolithic SyncFET technology. • 100% R (Gate Resistance) Tested G S1D2 1 8 D S1D2 D Q1 S1D2 2 7 D G1 D 3 6 Q2 4 5 S2 SO-8 G G2 D1 S Dual N-Channel SyncFet S D1 Pin 1 SO- S Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Q2 Q1 Units V Drain-Source Voltage 30 30 V DSS V Gate-Source Voltage V GSS ±20 ±20 I Drain Current - Continuous (Note 1a) 8.2 6.9 A D - Pulsed 30 20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 40 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6900AS FDS6900AS 13” 12mm 2500 units FDS6900AS FDS6900AS_NL (Note 4) 13” 12mm 2500 units FDS6900AS Rev B(X) ©2005
