FDS6898AZ ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETapplications where low in-line power• High performance trench technology for extremelyloss and fast ..
FDS6898AZ ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description MOSFETDual N-Channel Logic Level PWM Optimized PowerTrenchOctober 2001FDS6898AZ
FDS6898AZ ,Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETFDS6898AZFDS6898AZ® ®These N-Channel Logic Level MOSFETs are produced • 9.4 A, 20 VR = 14 m Ω @ V ..
FDS6898AZ_F085 ,20V Dual N-Channel Logic Level PWM Optimized PowerTrench?MOSFETapplications where low in-line powerlow RDS(ON)loss and fast switching are required.• High power an ..
FDS6900AS Features The FDS6900AS is designed to replace two single SO- • Q2: Optimized to minimize conduction ..
FDS6900S ,Dual N-Channel PowerTrench SyncFETFeatures The FDS6900S is designed to replace two single SO-8 • Q2: Optimized to minimize conductio ..
FQPF3N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, R = 3.6Ω @V = 10 VDS(on) ..
FQPF3N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQPF3N80800V N-Channel MOSFET
FQPF3N80C ,800V N-Channel Advance Q-FET C-SeriesFQP3N80C/FQPF3N80CTMQFETFQP3N80C/FQPF3N80C800V N-Channel MOSFET
FQPF3N90 ,900V N-Channel MOSFETSeptember 2000TMQFET QFET QFET QFETFQPF3N90900V N-Channel MOSFET
FQPF3N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 2.1A, 900V, R = 4.25 Ω @ V = 10 VDS(o ..
FQPF3P20 ,QFET P-CHANNELFEATURESBV = - 200VDSS• Advanced New DesignR = 2.7ΩDS(ON)• Avalanche Rugged TechnologyI = - 2.2AD• ..
FDS6898AZ
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6898AZ October 2001 FDS6898AZ Ò Ò Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced · 9.4 A, 20 V R = 14 m W @ V = 4.5 V DS(ON) GS using Fairchild Semiconductor’s advanced R = 18 m W @ V = 2.5 V DS(ON) GS PowerTrench process that has been especially tailored · Low gate charge (16 nC typical) to minimize the on-state resistance and yet maintain superior switching performance. · ESD protection diode (note 3) These devices are well suited for low voltage and battery powered applications where low in-line power · High performance trench technology for extremely loss and fast switching are required. low R DS(ON) · High power and current handling capability D1 D D1 5 4 D D2 D Q1 D2 D 6 3 7 2 G1 SO-8 G S1 Q2 S G2 S 8 1 S2 SO-8 S Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage ± 12 V GSS I Drain Current – Continuous (Note 1a) 9.4 A D – Pulsed 38 P W D Power Dissipation for Dual Operation 2 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6898AZ FDS6898AZ 13’’ 12mm 2500 units Ó2001 FDS6898AZ Rev C (W)
