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FDS6699SFAIN/a410avai30V N-Channel PowerTrench SyncFET
FDS6699S_NLFAIRCHILN/a180avai30V N-Channel PowerTrench SyncFET


FDS6699S ,30V N-Channel PowerTrench SyncFETGeneral Description 21 A, 30 V Max R = 3.6 mΩ @ V = 10 V The FDS6699S is designed to replace a sing ..
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FDS6699S-FDS6699S_NL
30V N-Channel PowerTrench SyncFET
® FDS6699S 30V N-Channel PowerTrench SyncFET™ January 2005 FDS6699S ® 30V N-Channel PowerTrench SyncFET™ Features General Description ■ 21 A, 30 V Max R = 3.6 mΩ @ V = 10 V The FDS6699S is designed to replace a single SO-8 MOSFET DS(ON) GS Max R = 4.5 mΩ @ V = 4.5 V and Schottky diode in synchronous DC:DC power supplies. DS(ON) GS This 30V MOSFET is designed to maximize power conversion ■ Includes SyncFET Schottky body diode efficiency, providing a low R and low gate charge. The DS(ON) ■ High performance trench technology for extremely low FDS6699S includes an integrated Schottky diode using Fair- R and fast switching DS(ON) child’s monolithic SyncFET technology. ■ High power and current handling capability ■ 100% R (Gate Resistance) tested G Applications ■ Synchronous Rectifier for DC/DC Converters – ■ Notebook Vcore low side switch ■ Point of Load low side switch D 5 4 D D 6 3 D 7 2 G S 8 1 S SO-8 S Absolute Maximum Ratings T =25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) 21 A D – Pulsed 105 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range –55 to +125 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 25 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6699S FDS6699S 13’’ 12mm 2500 units ©2005 1 FDS6699S Rev. D
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