FDS6682_NL ,30V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 14 A, 30 V. R = 7.5 mΩ @ V = 10 VDS(ON) GSspecifi ..
FDS6682_NL. ,30V N-Channel PowerTrench MOSFETFDS6682February 2004FDS6682Ò30V N-Channel PowerTrench MOSFET
FDS6682_NL.. ,30V N-Channel PowerTrench MOSFETApplications• High power and current handling capability• DC/DC converterDD5 4DD6 37 2GS8 1SSO-8SoA ..
FDS6685 ,30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –8.8 A, –30 V R = 20 mΩ @ V = –10 V DS ..
FDS6688 ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 16 A, 30 V. R = 6 mΩ @ V = 10 V DS(ON) GSspecif ..
FDS6688_NL ,30V N-Channel PowerTrench MOSFETApplicationslow RDS(ON)• DC/DC converter• High power and current handling capabilityDD 5 4DDDD6 3DD ..
FQP7P06 ,60V P-Channel MOSFET
FQP7P06 ,60V P-Channel MOSFET
FQP85N06 ,60V N-Channel MOSFET
FQP85N06 ,60V N-Channel MOSFET
FQP8N60C ,600V N-Channel Advance Q-FET C-SeriesFQP8N60C/FQPF8N60C®QFETFQP8N60C/FQPF8N60C600V N-Channel MOSFET
FQP8N60C. ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 7.5A, 600V, R = 1.2Ω @V = 10 VDS(on) ..
FDS6682_NL-FDS6682_NL.-FDS6682_NL..
30V N-Channel PowerTrench MOSFET
FDS6682 February 2004 FDS6682 Ò 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed · 14 A, 30 V. R = 7.5 mW @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 9.0 mW @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for · Low gate charge (22 nC typical) “low side” synchronous rectifier operation, providing an extremely low R in a small package. DS(ON) · High performance trench technology for extremely low R DS(ON) Applications · High power and current handling capability · DC/DC converter D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS ID Drain Current – Continuous (Note 1a) 14 A – Pulsed 50 Power Dissipation for Single Operation (Note 1a) 2.5 P W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 R °C/W qJA Thermal Resistance, Junction-to-Case (Note 1) 25 R °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6682 FDS6682 13’’ 12mm 2500 units Ó2004 FDS6682 Rev D(W)
