FDS6680AS ,30V N-Channel PowerTrench SyncFETGeneral Description 11.5 A, 30 V. R max = 8.0 mΩ @ V = 10 V The FDS6680AS is designed to replace ..
FDS6680AS_NL , 30V N-Channel PowerTrench SyncFET
FDS6680S ,30V N-Channel PowerTrench SyncFET TMFeaturesThe FDS6680S is designed to replace a single SO-8• 11.5 A, 30 V. R = 0.011 Ω @ V = 10 VDS(O ..
FDS6680S_NL ,30V N-Channel PowerTrench SyncFETApplications• High power and current handling capability• DC/DC converter• Motor drivesDD5 4DD6 37 ..
FDS6681Z ,30 Volt P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is produced using Fairchild • –20 A, –30 V. R = 4.6 mΩ @ V = –10 V D ..
FDS6681Z ,30 Volt P-Channel PowerTrench MOSFETapplications common in Notebook low R DS(ON)Computers and Portable Battery Packs. • High power and ..
FQP6N60C ,600V N-Channel Advance Q-FET C-Series
FQP6N60C ,600V N-Channel Advance Q-FET C-Series
FQP6N70 ,700V N-Channel MOSFET
FQP7N10 ,100V N-Channel MOSFET
FQP7N10L ,100V LOGIC N-Channel MOSFET
FQP7N20 ,200V N-Channel MOSFET
FDS6680AS
30V N-Channel PowerTrench SyncFET
® FDS6680AS 30V N-Channel PowerTrench SyncFET™ January 2005 FDS6680AS ® 30V N-Channel PowerTrench SyncFET™ Features General Description ■ 11.5 A, 30 V. R max = 8.0 mΩ @ V = 10 V The FDS6680AS is designed to replace a single SO-8 MOSFET DS(ON) GS R max = 10.5 mΩ @ V = 4.5 V and Schottky diode in synchronous DC:DC power supplies. DS(ON) GS This 30V MOSFET is designed to maximize power conversion ■ Includes SyncFET Schottky body diode efficiency, providing a low R and low gate charge. The DS(ON) ■ Low gate charge (22nC typical) FDS6680AS includes an integrated Schottky diode using ■ High performance trench technology for extremely low Fairchild’s monolithic SyncFET technology. The performance of R and fast switching DS(ON) the FDS6680AS as the low-side switch in a synchronous ■ High power and current handling capability rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode. Applications ■ DC/DC converter ■ Low side notebooks D 5 4 D D 6 3 D 7 2 G S 8 1 S SO-8 S Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) 11.5 A D – Pulsed 50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6680AS FDS6680AS 13" 12mm 2500 units FDS6680AS FDS6680AS_NL (Note 4) 13" 12mm 2500 units ©2005 1 FDS6680AS Rev. A (X)
