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FDS6676S_NL |FDS6676SNLFAIRCHILDN/a159avai30V N-Channel PowerTrench SyncFET


FDS6676S_NL ,30V N-Channel PowerTrench SyncFETApplications • High power and current handling capability• DC/DC converter • Motor drives DD5 4DD ..
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FDS6676S_NL
30V N-Channel PowerTrench SyncFET
FDS6676S January 2004 FDS6676S Ò ™ 30V N-Channel PowerTrench SyncFET General Description Features The FDS6676S is designed to replace a single SO-8 · 14.5 A, 30 V. R 7.5 mW @ V = 10 V DS(ON) GS MOSFET and Schottky diode in synchronous DC:DC R 9.0 mW @ V = 4.5 V DS(ON) GS power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low · Includes SyncFET Schottky body diode R and low gate charge. The FDS6676S includes DS(ON) an integrated Schottky diode using Fairchild’s · Low gate charge (43nC typical) monolithic SyncFET technology. · High performance trench technology for extremely low R and fast switching DS(ON) Applications · High power and current handling capability · DC/DC converter · Motor drives D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS ±16 I Drain Current – Continuous (Note 1a) 14.5 A D – Pulsed 50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 R °C/W qJA Thermal Resistance, Junction-to-Case (Note 1) 25 R qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6676S FDS6676S 13’’ 12mm 2500 units FDS6676S Rev F1 (W) Ó2004
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