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FDS6673BZ_F085FAIRCHILN/a5000avai-30V P-Channel PowerTrench?MOSFET


FDS6673BZ_F085 ,-30V P-Channel PowerTrench?MOSFETapplications common in Notebook„ High performance trench technology for extremely low Computers and ..
FDS6675 ,Single P-Channel, Logic Level, PowerTrench TM MOSFETFeaturesThis P-Channel Logic Level MOSFET is produced A, -30 V. R = 0.014 Ω @ V = -10 V, ..
FDS6675_NL ,Single P-Channel Logic Level PowerTrench MOSFETapplications: load switching and power management,battery charging circuits,T M T MD54DDFDS 63D72GS ..
FDS6675A ,30V P-Channel PowerTrench MOSFETFDS6675A February 2003 FDS6675A    30V P-Channel PowerTrench MOSFET
FDS6675A ,30V P-Channel PowerTrench MOSFETapplications requiring a wide range of gate drive voltage • Low gate charge ratings (4.5V – 25V). ..
FDS6675A ,30V P-Channel PowerTrench MOSFETApplications • Power management • High performance trench technology for extremely low R DS(ON)• ..
FQP2P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect  -2.3A, -250V, R = 4.0Ω @V = -10 VDS(o ..
FQP2P40 ,400V P-Channel MOSFETFQP2P40December 2000TMQFET QFET QFET QFETFQP2P40400V P-Channel MOSFET
FQP30N06 ,60V N-Channel MOSFETFQP30N06May 2001TMQFETFQP30N0660V N-Channel MOSFET
FQP30N06L ,60V LOGIC N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQP30N06L ,60V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 32A, 60V, R = 0.035Ω @V = 10 VDS(on) ..
FQP32N12V2 ,120V N-Channel Advanced QFET V2 seriesFeaturesThese N-Channel enhancement mode power field effect • 32 A, 120V, R = 0.05Ω @V = 10 VDS(on) ..


FDS6673BZ_F085
-30V P-Channel PowerTrench?MOSFET
® FDS6673BZ_F085 P-Channel PowerTrench MOSFET July 2009 FDS6673BZ_F085 ® P-Channel PowerTrench MOSFET -30V, -14.5A, 7.8mΩ General Description Features This P-Channel MOSFET is produced using Fairchild „ Max r = 7.8mΩ, V = -10V, I = -14.5A DS(on) GS D Semiconductor’s advanced Power Trench process that „ Max r = 12mΩ, V = -4.5V, I = -12A DS(on) GS D has been especially tailored to minimize the on-state „ Extended V range (-25V) for battery applications GS resistance. This device is well suited for Power Management and „ HBM ESD protection level of 6.5kV typical (note 3) load switching applications common in Notebook „ High performance trench technology for extremely low Computers and Portable Battery Packs. r DS(on) „ High power and current handling capability „ RoHS compliant „ Qualified to AEC Q101 D D 5 4 D D 6 3 7 2 G S S 8 1 SO-8 S MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage -30 V DS V Gate to Source Voltage ±25 V GS Drain Current -Continuous (Note1a) -14.5 A I D -Pulsed -75 A Power Dissipation for Single Operation (Note1a) 2.5 P (Note1b) 1.2 W D (Note1c) 1.0 T , T Operating and Storage Temperature -55 to 150 °C J STG Thermal Characteristics R Thermal Resistance , Junction to Ambient (Note 1a) 50 °C/W θJA R Thermal Resistance , Junction to Case (Note 1) 25 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS6673BZ FDS6673BZ_F085 13’’ 12mm 2500 units ©2009 1 FDS6673BZ_F085 Rev. A
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