FDS6672A ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 12.5 A, 30 V. R = 8 mΩ @ V = 10 V DS(ON) GSspec ..
FDS6672A_NL ,30V N-Channel PowerTrench MOSFETApplications • Low gate charge (33 nC typical) • DC/DC converter • High power and current handling ..
FDS6673AZ ,30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET has been designed • –14.5 A, –30 V. R = 7.2 mΩ @ V = –10 V DS(ON) GS ..
FDS6673BZ ,-30V P-Channel PowerTrench?MOSFETFeaturesThis P-Channel MOSFET is produced using Fairchild Max r = 7.8m: V = -10V, I = -14.5A ..
FDS6673BZ_F085 ,-30V P-Channel PowerTrench?MOSFETapplications common in Notebook High performance trench technology for extremely low Computers and ..
FDS6675 ,Single P-Channel, Logic Level, PowerTrench TM MOSFETFeaturesThis P-Channel Logic Level MOSFET is produced A, -30 V. R = 0.014 Ω @ V = -10 V, ..
FQP24N08 ,80V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FQP27N25 ,250V N-Channel MOSFET
FQP27N25 ,250V N-Channel MOSFET
FQP27N25 ,250V N-Channel MOSFET
FQP27P06 ,60V P-Channel MOSFETFQP27P06May 2001TMQFETFQP27P0660V P-Channel MOSFET
FQP2N30 ,300V N-Channel MOSFET
FDS6672A
30V N-Channel PowerTrench MOSFET
FDS6672A April 2001 FDS6672A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 12.5 A, 30 V. R = 8 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 9.5 mΩ @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • High performance trench technology for extremely low gate charge, low R and fast switching speed. DS(ON) low R DS(ON) Applications • Low gate charge (33 nC typical) • DC/DC converter • High power and current handling capability D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage V GSS ±12 I Drain Current – Continuous (Note 1a) 12.5 A D – Pulsed 50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6672A FDS6672A 13’’ 12mm 2500 units FDS6672A Rev C(W) 2000
