FDS6670A_NL ,Single N-Channel Logic Level PowerTrench MOSFETapplications where low in-line powerloss and fast switching are required.• High performance trench ..
FDS6670AS FeaturesThe FDS6670AS is designed to replace a single SO-8 13.5 A, 30 V. R max= 9.0 m @ V = ..
FDS6670S ,30V N-Channel PowerTrench SyncFET TMFeatures The FDS6670S is designed to replace a single SO-8 • 13.5 A, 30 V. R = 9 mΩ @ V = 10 V DS( ..
FDS6672 ,30V N-Channel PowerTrench MOSFETApplications• Low gate charge (33 nC typical)• DC/DC converter• High power and current handling cap ..
FDS6672A ,30V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 12.5 A, 30 V. R = 8 mΩ @ V = 10 V DS(ON) GSspec ..
FDS6672A_NL ,30V N-Channel PowerTrench MOSFETApplications • Low gate charge (33 nC typical) • DC/DC converter • High power and current handling ..
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FQP19N20L ,200V LOGIC N-Channel MOSFET
FQP1N50 ,500V N-Channel MOSFET
FQP1N60 ,QFET N-CHANNELFEATURESBV = 600VDSS• Advanced New DesignR = 11.5ΩDS(ON)• Avalanche Rugged TechnologyI = 1.2AD• Rug ..
FQP1N60 ,QFET N-CHANNELQFET N-CHANNEL FQP1N60
FQP1P50 ,500V P-Channel MOSFETJune 2000TMQFET QFET QFET QFETFQP1P50500V P-Channel MOSFET
FDS6670A_NL
Single N-Channel Logic Level PowerTrench MOSFET
FDS6670A June 2003 FDS6670A Ò Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced · 13 A, 30 V. R = 8 mW @ V = 10 V DS(ON) GS using Fairchild Semiconductor’s advanced R = 10 mW @ V = 4.5 V DS(ON) GS PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain · Fast switching speed superior switching performance. These devices are well suited for low voltage and · Low gate charge battery powered applications where low in-line power loss and fast switching are required. · High performance trench technology for extremely low R DS(ON) · High power and current handling capability DD 5 4 DD DD 6 3 D D 7 2 SO-8 G G 8 1 S S S S S SO-8 S Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) 13 A D – Pulsed 50 Power Dissipation for Single Operation (Note 1a) 2.5 P W D (Note 1b) 1.0 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W qJA R Thermal Resistance, Junction-to-Ambient (Note 1b) 125 qJA Thermal Resistance, Junction-to-Case (Note 1) 25 R qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6670A FDS6670A 13’’ 12mm 2500 units Ó2003 FDS6670A Rev F (W)
