FDS6644 ,30V N-Channel PowerTrench MOSFETFDS6644FDS6644® ®This N-Channel MOSFET has been designed• 13 A, 30 V.R = 8.5 m Ω = 10 Vspecificall ..
FDS6670A ,Single N-Channel, Logic Level, PowerTrench MOSFETGeneral Description MOSFET-Channel, Logic Level, PowerTrenchSingle N0ADS667O( TAV Vo oI C CΔ / Δ TJ ..
FDS6670A_NL ,Single N-Channel Logic Level PowerTrench MOSFETapplications where low in-line powerloss and fast switching are required.• High performance trench ..
FDS6670AS FeaturesThe FDS6670AS is designed to replace a single SO-8 13.5 A, 30 V. R max= 9.0 m @ V = ..
FDS6670S ,30V N-Channel PowerTrench SyncFET TMFeatures The FDS6670S is designed to replace a single SO-8 • 13.5 A, 30 V. R = 9 mΩ @ V = 10 V DS( ..
FDS6672 ,30V N-Channel PowerTrench MOSFETApplications• Low gate charge (33 nC typical)• DC/DC converter• High power and current handling cap ..
FQP17P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQP17P10 ,100V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -16.5A, -100V, R = 0.19Ω @V = -10 VDS ..
FQP18N20V2 ,200V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FQP18N50V2 ,500V N-Channel MOSFETFQP18N50V2/FQPF18N50V2TMQFETFQP18N50V2/FQPF18N50V2500V N-Channel MOSFET
FQP19N10 ,100V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 19A, 100V, R = 0.1Ω @V = 10 VDS(on) G ..
FQP19N10L ,100V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 19A, 100V, R = 0.1Ω @V = 10 VDS(on) G ..
FDS6644
30V N-Channel PowerTrench MOSFET
FDS6644 September 2001 FDS6644 Ò Ò 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed · 13 A, 30 V. R = 8.5 m W @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 10.5 m W @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for · High performance trench technology for extremely low gate charge, low R and fast switching speed. DS( ON) low R DS(ON) Applications · Low gate charge (25 nC typical) · DC/DC converter · High power and current handling capability D D 5 4 DD DD 6 3 DD 7 2 SO-8 G G 8 1 S S S S S SO-8 S Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±16 V GSS I Drain Current – Continuous (Note 1a) 13 A D – Pulsed 52 Power Dissipation for Single Operation (Note 1a) 2.5 P W D (Note 1b) 1.4 (Note 1c) 1.2 T , T Operating and Storage Junction Temperature Range –55 to +175 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W qJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 R °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6644 FDS6644 13’’ 12mm 2500 units Ó2001 FDS6644 Rev A (W)
