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FDS6630ANSCN/a430avaiN-Channel Logic Level PowerTrench TM MOSFET
FDS6630A. |FDS6630AFairchildN/a28580avaiN-Channel Logic Level PowerTrench TM MOSFET


FDS6630A. ,N-Channel Logic Level PowerTrench TM MOSFETapplications where low in-line power loss and• High performance trench technology for extremelyfas ..
FDS6630A_NL ,N-Channel Logic Level PowerTrench MOSFETApplications• High power and current handling capability.• DC/DC converter• Load switch• Motor driv ..
FDS6644 ,30V N-Channel PowerTrench MOSFETFDS6644FDS6644® ®This N-Channel MOSFET has been designed• 13 A, 30 V.R = 8.5 m Ω = 10 Vspecificall ..
FDS6670A ,Single N-Channel, Logic Level, PowerTrench MOSFETGeneral Description MOSFET-Channel, Logic Level, PowerTrenchSingle N0ADS667O( TAV Vo oI C CΔ / Δ TJ ..
FDS6670A_NL ,Single N-Channel Logic Level PowerTrench MOSFETapplications where low in-line powerloss and fast switching are required.• High performance trench ..
FDS6670AS FeaturesThe FDS6670AS is designed to replace a single SO-8  13.5 A, 30 V. R max= 9.0 m @ V = ..
FQP17N08 ,80V N-Channel MOSFETapplications such as automotive,high efficiency switching for DC/DC converters, and DCmotor contro ..
FQP17N08L ,80V LOGIC N-Channel MOSFETapplications such as automotive, Low level gate drive requirements allowinghigh efficiency switchi ..
FQP17N40 ,400V N-Channel MOSFET
FQP17N40 ,400V N-Channel MOSFET
FQP17P06 ,60V N-Channel MOSFETFQP17P06May 2001TMQFETFQP17P0660V P-Channel MOSFET
FQP17P06 ,60V N-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -17A, -60V, R = 0.12Ω @V = -10 VDS(on ..


FDS6630A-FDS6630A.
N-Channel Logic Level PowerTrench TM MOSFET
FDS6630A April 1999 FDS6630A TM N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using • 6.5 A, 30 V. R = 0.038 Ω @ V = 10 V DS(on) GS Fairchild Semiconductor's advanced PowerTrench process R = 0.053 Ω @ V = 4.5 V that has been especially tailored to minimize on-state DS(on) GS resistance and yet maintain superior switching performance. • Low gate charge (5nC typical). These devices are well suited for low voltage and battery • Fast switching speed. powered applications where low in-line power loss and • High performance trench technology for extremely fast switching are required. low R . DS(ON) Applications • High power and current handling capability. • DC/DC converter • Load switch • Motor drives D D 5 4 D D 6 3 7 2 G S 1 S 8 SO-8 pin 1 S T = 25°C unless otherwise noted Absolute Maximum Ratings A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage 20 V GSS ± I Drain Current - Continuous (Note 1a) 6.5 A D - Pulsed 40 (Note 1a) P Power Dissipation for Single Operation 2.5 W D (Note 1b) 1.2 (Note 1c) 1 T , T Operating and Storage Junction Temperature Range -55 to +150 C J stg ° Thermal Characteristics (Note 1a) R Thermal Resistance, Junction-to-Ambient 50 C/W JA ° θ (Note 1) R Thermal Resistance, Junction-to-Case 25 C/W JC ° θ Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS6630A FDS6630A 13’’ 12mm 2500 units 1999 FDS6630A Rev. C1
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