FDS6609A ,P-Channel Logic Level PowerTrench MOSFETFeaturesThis P-Channel Logic Level MOSFET is produced• –6.3 A, –30 V. R = 0.032 Ω =@ V = -10 VDS(O ..
FDS6612A ,Single N-Channel, Logic Level, PowerTrench TM MOSFETFeaturesDescriptionGeneral MOSFET-Channel, Logic Level, PowerTrenchSingle NDS6612O( TAV Vo oI C CΔ ..
FDS6612A_NL ,Single N-Channel, Logic Level, Power Trench MOSFETFeaturesThis N-Channel Logic Level MOSFET is produced• 8.4 A, 30 V. R = 22 mΩ @ V = 10 VDS(ON) GSu ..
FDS6614A ,N-Channel Logic Level PowerTrench MOSFET , $-. ..
FDS6630A ,N-Channel Logic Level PowerTrench TM MOSFETFeaturesThis N-Channel Logic Level MOSFET is produced using• 6.5 A, 30 V. R = 0.038 Ω @ V = 10 VDS( ..
FDS6630A. ,N-Channel Logic Level PowerTrench TM MOSFETapplications where low in-line power loss and• High performance trench technology for extremelyfas ..
FQP10N60C ,600V N-Channel Advance Q-FET C-SeriesFQP10N60C/FQPF10N60CTMQFETFQP10N60C/FQPF10N60C600V N-Channel MOSFET
FQP11N40C ,400V N-Channel Advanced QFET C-seriesFQP11N40C/FQPF11N40C ®QFETFQP11N40C/FQPF11N40C400V N-Channel MOSFET
FQP11N40C ,400V N-Channel Advanced QFET C-seriesFQP11N40C/FQPF11N40C ®QFETFQP11N40C/FQPF11N40C400V N-Channel MOSFET
FQP11N40C ,400V N-Channel Advanced QFET C-seriesFeaturesThese N-Channel enhancement mode power field effect • 10.5 A, 400V, R = 0.5 Ω @V = 10 VD ..
FQP11N40C ,400V N-Channel Advanced QFET C-seriesFQP11N40C/FQPF11N40C ®QFETFQP11N40C/FQPF11N40C400V N-Channel MOSFET
FQP11N50CF , 500V N-Channel MOSFET
FDS6609A
P-Channel Logic Level PowerTrench MOSFET
FDS6609A April 2000 PRELIMINARY FDS6609A P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced • –6.3 A, –30 V. R = 0.032 Ω=@ V = -10 V DS(ON) GS using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored R = 0.05 Ω=@ V = -4.5 V DS(ON) GS to minimize on-state resistance and yet maintain superior switching performance. • Low gate charge These devices are well suited for low voltage and • Fast switching speed battery powered applications where low in-line power loss and fast switching are required. • High performance trench technology for extremely Applications low R DS(ON) • DC/DC converter • High power and current handling capability • Load switch • Motor Drive D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 1a) -6.3 A D – Pulsed -40 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics °C/W R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 θJA °C/W R Thermal Resistance, Junction-to-Case (Note 1) 25 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6609A FDS6609A 13’’ 12mm 2500 units 2000 FDS6609A Rev C
