FDS5351 ,60V N-Channel PowerTrench?MOSFETGeneral Description Max r = 35mΩ at V = 10V, I = 6.1A This N-Channel MOSFET is produced using ..
FDS5670 ,60V N-Channel PowerTrench TM MOSFET ..
FDS5670_NL ,60V N-Channel PowerTrench MOSFET ..
FDS5672 ,60V N-Channel PowerTrench?MOSFETApplications DC/DC convertersBranding Dash5 46 3517 2238 14SO-82005 Fairchild Semiconductor Corpor ..
FDS5680 ,60V N-Channel PowerTrench TM MOSFET ..
FDS5680_NL ,Single N-Channel PowerTrench MOSFET ..
FQD6N60C ,600V N-Channel MOSFETFeatures Description 4 A, 600 V, R = 2.0 Ω @ V = 10 V These N-Channel enhancement mode power field ..
FQD6P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -4.7A, -250V, R = 1.1Ω @V = -10 VDS(o ..
FQD6P25TF ,250V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -4.7A, -250V, R = 1.1Ω @V = -10 VDS(o ..
FQD6P25TF ,250V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -4.7A, -250V, R = 1.1Ω @V = -10 VDS(o ..
FQD6P25TM ,250V P-Channel QFETApril 2000TMQFET QFET QFET QFETFQD6P25 / FQU6P25250V P-Channel MOSFET
FQD7N10L ,100V LOGIC N-Channel MOSFETapplications such as highdirect operation from logic drivesefficiency switching DC/DC converters, a ..
FDS5351
60V N-Channel PowerTrench?MOSFET
® FDS5351 N-Channel PowerTrench MOSFET April 2008 FDS5351 ® N-Channel PowerTrench MOSFET 60V, 6.1A, 35mΩ Features General Description Max r = 35mΩ at V = 10V, I = 6.1A This N-Channel MOSFET is produced using Fairchild DS(on) GS D ® Semiconductor‘s advanced Power Trench process that has Max r = 42mΩ at V = 4.5V, I = 5.5A DS(on) GS D been especially tailored to minimize the on-state resistance and High performance trench technology for extremely low r yet maintain superior switching performance. DS(on) 100% UIL Tested RoHS Compliant Application Inverter Switch Synchronous Rectifier Load Switch D D G 5 4 D D D D S 6 3 D 7 2 S G SO-8 S D 8 S 1 S Pin 1 S MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous 6.1 I A D -Pulsed 30 E Single Pulse Avalanche Energy (Note 3) 73 mJ AS Power Dissipation T = 25°C (Note 1a) 5 A P W D Power Dissipation T = 25°C (Note 1b) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 25 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDS5351 FDS5351 SO-8 13’’ 12mm 2500units 1 ©2008 FDS5351 Rev.C
