FDS4935BZ ,-30V Dual P-Channel PowerTrench?MOSFETFeaturesThis P-Channel MOSFET has been designed x –6.9 A, –30 V. R = 22 m: @ V = –10 V DS(ON) GSspe ..
FDS4953 ,Dual 30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –5 A, –30 V R = 55 mΩ @ V = –10 V DS(O ..
FDS4953_NL ,Dual30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –5 A, –30 V R = 55 mΩ @ V = –10 V DS(O ..
FDS4953_NL. ,Dual30V P-Channel PowerTrench MOSFETApplications • Power management • High performance trench technology for extremely low RDS(ON) • ..
FDS5170N7 ,60V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 10.6 A, 60 V. R = 12 mΩ @ V = 10 V DS(ON) GSspe ..
FDS5170N7 ,60V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • Synchronous rectifier • Fast switching, ..
FQD5N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, R = 1.2Ω @V = 10 VDS(on) ..
FQD5N20LTM ,200V N-Channel Logic Level QFETFeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, R = 1.2Ω @V = 10 VDS(on) ..
FQD5N20TF ,200V N-Channel QFET
FQD5N50C ,500V N-Channel Advance QFET C-SeriesFQD5N50C / FQU5N50C TMQFETFQD5N50C / FQU5N50C500V N-Channel MOSFET
FQD5N50TF ,500V N-Channel QFET
FQD5N50TF ,500V N-Channel QFET
FDS4935BZ
-30V Dual P-Channel PowerTrench?MOSFET
FDS4935BZ September 2006 tm FDS4935BZ Dual 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed x –6.9 A, –30 V. R = 22 m: @ V = –10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 35 m: @ V = – 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers, and battery chargers. x Extended V range (–25V) for battery applications GSS These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable x ESD protection diode (note 3) R specifications. DS(ON) x High performance trench technology for extremely The result is a MOSFET that is easy and safer to drive low R DS(ON) (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. x High power and current handling capability D1 D 5 4 D1 D D2 D Q1 6 3 D2 D 7 2 G1 SO-8 Q2 G S1 8 1 S G2 S S2 SO-8 S Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DS\ V Gate-Source Voltage +25 V GS I Drain Current – Continuous (Note 1a) –6.9 A D – Pulsed –50 P Power Dissipation for Single Operation (Note 1a) 1.6 W D (Note 1b) 1.0 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 qC J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 qC/W TJA R Thermal Resistance, Junction-to-Case (Note 1) 40 qC/W TJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4935BZ FDS4935BZ 13’’ 12mm 2500 units FDS4935BZ Rev B1 (W) 2006
