FDS4935A. ,Dual 30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –7 A, –30 V R = 23 mΩ @ V = –10 V DS(O ..
FDS4935A_NL ,Dual 30V P-Channel PowerTrench® MOSFETApplications • Power management • High performance trench technology for extremely low R DS(ON)• ..
FDS4935BZ ,-30V Dual P-Channel PowerTrench?MOSFETFeaturesThis P-Channel MOSFET has been designed x –6.9 A, –30 V. R = 22 m: @ V = –10 V DS(ON) GSspe ..
FDS4953 ,Dual 30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –5 A, –30 V R = 55 mΩ @ V = –10 V DS(O ..
FDS4953_NL ,Dual30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –5 A, –30 V R = 55 mΩ @ V = –10 V DS(O ..
FDS4953_NL. ,Dual30V P-Channel PowerTrench MOSFETApplications • Power management • High performance trench technology for extremely low RDS(ON) • ..
FQD5N15 ,150V N-Channel MOSFET
FQD5N15 ,150V N-Channel MOSFET
FQD5N15 ,150V N-Channel MOSFET
FQD5N15TF ,150V N-Channel QFET
FQD5N20L ,200V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, R = 1.2Ω @V = 10 VDS(on) ..
FQD5N20LTM ,200V N-Channel Logic Level QFETFeaturesThese N-Channel enhancement mode power field effect 3.8A, 200V, R = 1.2Ω @V = 10 VDS(on) ..
FDS4935A-FDS4935A.
Dual 30V P-Channel PowerTrench MOSFET
FDS4935A March 2002 FDS4935A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of • –7 A, –30 V R = 23 mΩ @ V = –10 V DS(ON) GS Fairchild Semiconductor’s advanced PowerTrench R = 35 mΩ @ V = –4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gave drive • Low gate charge (15nC typical) voltage ratings (4.5V – 20V). • Fast switching speed Applications • Power management • High performance trench technology for extremely low R DS(ON) • Load switch • Battery protection • High power and current handling capability D1 D 5 4 D1 D D2 D Q1 6 3 D2 D 7 2 G1 SO-8 Q2 G S1 8 1 S G2 S S2 SO-8 S Pin 1 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 1a) –7 A D – Pulsed –30 P Power Dissipation for Dual Operation 2 D Power Dissipation for Single Operation (Note 1a) 1.6 P W D (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 40 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4935A FDS4935A 13’’ 12mm 2500 units FDS4935A Rev A(W) 2002
