FDS4885C_NL ,40V Dual N & P-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise notedASymbol Parameter Test Conditions Type Mi ..
FDS4897C ,40V Dual N & P-Channel PowerTrench?MOSFETFeatures These dual N- and P-Channel enhancement mode • Q1: N-Channel power field effect transisto ..
FDS4935 ,Dual 30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –7 A, –30 V R = 23 mΩ @ V = –10 V DS(O ..
FDS4935_NL ,Dual 30V P-Channel PowerTrench MOSFETApplications • Power management • High performance trench technology for extremely low R DS(ON)• ..
FDS4935A ,Dual 30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –7 A, –30 V R = 23 mΩ @ V = –10 V DS(O ..
FDS4935A. ,Dual 30V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –7 A, –30 V R = 23 mΩ @ V = –10 V DS(O ..
FQD3N50C ,500V N-Channel MOSFETFeatures Description• 2.5 A, 500 V, R = 2.5 Ω @ V = 10 V These N-Channel enhancement mode power fie ..
FQD3P20 ,200V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -2.4A, -200V, R = 2.7Ω @V = -10 VDS(o ..
FQD3P20TF ,200V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -2.4A, -200V, R = 2.7Ω @V = -10 VDS(o ..
FQD3P50 ,500V P-Channel MOSFETAugust 2000TMQFET QFET QFET QFETFQD3P50 / FQU3P50500V P-Channel MOSFET
FQD3P50TF ,500V P-Channel QFETAugust 2000TMQFET QFET QFET QFETFQD3P50 / FQU3P50500V P-Channel MOSFET
FQD3P50TM ,500V P-Channel QFETGeneral DescriptionThese P-Channel enhancement mode power field effect
FDS4885C-FDS4885C_NL
40V Dual N & P-Channel PowerTrench MOSFET
FDS4885C January 2005 FDS4885C Ò Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode · Q1: N-Channel power field effect transistors are produced using 7.5A, 40V R = 22mW @ V = 10V DS(on) GS Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize R = 35mW @ V = 7V DS(on) GS on-state resistance and yet maintain superior switching performance. · Q2: P-Channel –6A, –40V R = 31mW @ V = –10V These devices are well suited for low voltage and DS(on) GS battery powered applications where low in-line power R = 42mW @ V = –4.5V loss and fast switching are required. DS(on) GS · Fast switching speed Applications · High power and handling capability in a widely · Synchronous rectifier used surface mount package · Backlight inverter stage Q2 D2 D 5 4 D2 D D1 D D1 6 3 D Q1 7 2 G2 SO-8 S2 G G1 S 8 1 S1 S Pin 1 SO-8 S Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain-Source Voltage 40 40 V DSS V Gate-Source Voltage ±20 ±20 V GSS I Drain Current - Continuous (Note 1a) 7.5 –6 A D - Pulsed 20 –20 P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 78 R °C/W qJA Thermal Resistance, Junction-to-Case (Note 1) 40 R qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4885C FDS4885C 13” 12mm 2500 units Ó2005 FDS4885C Rev D(W)
