FDS4672A ,40V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 11 A, 40 V. R = 13 mΩ @ V = 4.5 V DS(ON) GSspec ..
FDS4672A_NL ,40V N-Channel PowerTrench MOSFETApplications • DC/DC converter • High power and current handling capability DD5 4DD6 37 2GS8 1SSO ..
FDS4675 ,40V P-Channel PowerTrench MOSFETFeatures This P-Channel MOSFET is a rugged gate version of • –11 A, –40 V R = 0.013 Ω @ V = –10 V D ..
FDS4675_F085 ,-40V P-Channel PowerTrench?MOSFETApplications low R DS(ON)• Power management • High power and current handling capability • Load sw ..
FDS4675_NL ,40V P-Channel PowerTrench MOSFETApplications low R DS(ON)• Power management • High power and current handling capability • Load sw ..
FDS4685 ,40V P-Channel PowerTrench MOSFETGeneral DescriptionDS(ON) High power and current handling capabilityThis P-Channel MOSFET is a rugg ..
FQD1P50TM ,500V P-Channel QFETFQD1P50 / FQU1P50®QFETFQD1P50 / FQU1P50500V P-Channel MOSFET
FQD20N06 ,60V N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FQD20N06L ,60V LOGIC N-Channel MOSFETapplications such as automotive, DC/• Low level gate drive requirements allowing directDC converter ..
FQD20N06LE ,60V LOGIC N-Channel MOSFETapplications such as automotive, DC/• Low level gate drive requirements allowing directDC converter ..
FQD20N06LTM ,60V N-Channel Logic level QFETapplications such as automotive, DC/• Low level gate drive requirements allowing directDC converter ..
FQD20N06TM ,60V N-Channel QFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FDS4672A
40V N-Channel PowerTrench MOSFET
FDS4672A May 2001 FDS4672A 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 11 A, 40 V. R = 13 mΩ @ V = 4.5 V DS(ON) GS specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional • High performance trench technology for extremely switching PWM controllers. It has been optimized for low R DS(ON) low gate charge, low R and fast switching speed. DS(ON) • Low gate charge (35 nC typical) Applications • DC/DC converter • High power and current handling capability D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 40 V DSS V Gate-Source Voltage ±12 V GSS I Drain Current – Continuous (Note 1a) 11 A D – Pulsed 50 Power Dissipation for Single Operation (Note 1a) 2.5 P W D (Note 1b) 1.4 (Note 1c) 1.2 T , T Operating and Storage Junction Temperature Range °C J STG –55 to +175 Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 25 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4672A FDS4672A 13’’ 12mm 2500 units FDS4672A Rev C(W) 2001
