FDS4488 ,30V N-Channel PowerTrench MOSFETapplications where low in-line power loss and fast switching are required. • High performance trenc ..
FDS4488 ,30V N-Channel PowerTrench MOSFETFeatures This N -Channel MOSFET is produced using Fairchild • 7.9 A, 30 V. R = 22 mΩ @ V = 10 V DS ..
FDS4488 ,30V N-Channel PowerTrench MOSFETFDS4488 December 2001 FDS4488 Ò Ò30V N-Channel PowerTrench MOSFET
FDS4488 ,30V N-Channel PowerTrench MOSFETApplications • High power and current handling capability • DC/DC converter • Load switch • Motor d ..
FDS4501H ,Complementary PowerTrench Half-Bridge MOSFETFeatures This complementary MOSFET half-bridge device is • Q1: N-Channel produced using Fairchild’s ..
FDS4501H_NL ,Complementary PowerTrench Half-Bridge MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions Type M ..
FQD13N10TM ,100V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 10A, 100V, R = 0.18Ω @V = 10 VDS(on) ..
FQD16N25CTM , 250V N-Channel MOSFET
FQD17N08L ,80V LOGIC N-Channel MOSFETapplications such as automotive,direct operation from logic driveshigh efficiency switching for DC/ ..
FQD17P06 ,60V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect • -12A, -60V, R = 0.135Ω @V = -10 VDS(o ..
FQD17P06TM ,60V P-Channel QFETFQD17P06 / FQU17P06May 2001TMQFETFQD17P06 / FQU17P0660V P-Channel MOSFET
FQD18N20V2 ,200V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FDS4488
30V N-Channel PowerTrench MOSFET
FDS4488 December 2001 FDS4488 Ò Ò 30V N-Channel PowerTrench MOSFET General Description Features This N -Channel MOSFET is produced using Fairchild · 7.9 A, 30 V. R = 22 mW @ V = 10 V DS(ON) GS Semiconductor’s advanced PowerTrench process that RDS(ON) = 30 mW @ V GS = 4.5 V has been especially tailored to minimize on-state resistance and yet maintain superior switching · Low gate charge (9.5 nC typical) performance. These devices are well suited for low voltage and battery powered applications where low in- line power loss and fast switching are required. · High performance trench technology for extremely low R DS(ON) Applications · High power and current handling capability · DC/DC converter · Load switch · Motor drives D D 5 4 D D D D 6 3 D D 7 2 G SO-8 G 8 1 S S S S S Pin 1SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS VGSS Gate-Source Voltage ±25 V I Drain Current – Continuous (Note 1a) 7.9 A D – Pulsed 40 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range –55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 25 qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4488 FDS4488 13’’ 12mm 2500 units Ó2001 FDS4488 Rev B (W)
