| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| FDS4435A-NL |
FAI|Fairchild Semiconductor |
N/a |
8285 |
 |
|
FDS4435BZ ,-30V P-Channel PowerTrench?MOSFETGeneral Description Max r = 20m at V = -10V, I = -8.8A This P-Channel MOSFET is produced using Fa ..
FDS4435BZ. ,-30V P-Channel PowerTrench?MOSFETapplications common in Notebook Computers and DS(on) High power and current handling capability Po ..
FDS4435BZ_F085 ,-30V P-Channel PowerTrench?MOSFETapplications common in Notebook Computers and DS(on) High power and current handling capability Po ..
FDS4465 ,P-Channel 1.8V Specified PowerTrench MOSFETFeaturesThis P-Channel 1.8V specified MOSFET is a rugged• –13.5 A, –20 V. R = 8.5 mΩ @ V = –4.5 VDS ..
FDS4465_F085 ,P-Channel 1.8V Specified PowerTrench?MOSFETApplications • High performance trench technology for extremely low R DS(ON)• Power management • H ..
FQB9N25C ,250V N-Channel Advance Q-FET C-Series
FQB9N25CTM ,250V N-Channel Advance Q-FET C-Series
FQB9N25TM ,250V N-Channel QFET
