FDS4080N7 ,40V N-Channel Bottomless PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS4141 ,-40V P-Channel PowerTrench?MOSFETGeneral Description Max r = 13.0mΩ at V = -10V, I = -10.5A This P-Channel MOSFET has been produced ..
FDS4141 ,-40V P-Channel PowerTrench?MOSFETApplications Control switch in synchronous & non-synchronous buck Load switch InverterDDD 5 G4DD ..
FDS4141_F085 ,P-Channel PowerTrench?MOSFET -40V, -10.8A, 19.0m?Features Control switch in synchronous & non-synchronous buck Typ r = 10.5mΩ at V = -10V, I = -10 ..
FDS4410 ,Single N-Channel Logic Level PWM Optimized PowerTrench TM MOSFETGeneral Description MOSFETN-Channel Logic Level PWM Optimized PowerTrenchSingle DS441 F O( TAV ..
FDS4410_NL ,Single N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description MOSFETN-Channel Logic Level PWM Optimized PowerTrenchSingle DS441 F O( TAV ..
FQB6N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 5.8A, 800V, R = 1.95Ω @V = 10 VDS(on) ..
FQB6P25 ,250V P-Channel MOSFETFeaturesThese P-Channel enhancement mode power field effect -6.0A, -250V, R = 1.1Ω @V = -10 VDS(o ..
FQB6P25TM ,250V P-Channel QFETFeaturesThese P-Channel enhancement mode power field effect -6.0A, -250V, R = 1.1Ω @V = -10 VDS(o ..
FQB70N08 ,80V N-Channel MOSFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FQB70N08TM ,80V N-Channel QFETapplications such as automotive, highefficiency switching for DC/DC converters, and DC motorcontrol ..
FQB70N10 ,100V N-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FDS4080N7
40V N-Channel Bottomless PowerTrench MOSFET
FDS4080N7 April 2002 FDS4080N7 40V N-Channel Bottomless™ PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 13 A, 40 V R = 10 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for • High performance trench technology for extremely “low side” synchronous rectifier operation, providing an low R DS(ON) extremely low R in a small package. DS(ON) • High power and current handling capability Applications • Fast switching (Qg = 30 nC ) • Synchronous rectifier • DC/DC converter • Bottomless� SO-8 package: Enhanced thermal performance in industry-standard package size Bottom-side D Drain Contact DS 5 4 D S S D 6 3 D S 7 2 Bottomless G G S 8 1 SO-8 S S S S Pin 1 SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 40 V DSS V Gate-Source Voltage V GSS ± 20 I Drain Current – Continuous (Note 1a) 13 A D – Pulsed 60 Power Dissipation for Single Operation (Note 1a) 3.9 P W D T , T Operating and Storage Junction Temperature Range –55 to +175 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 38 °C/W θJA R Thermal Resistance, Junction-to-Ambient 1 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4080N7 FDS4080N7 13’’ 12mm 2500 units FDS4080N7 Rev B(W) 2002
