FDS4070N3 ,40V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS4070N3 ,40V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 15.3 A, 40 V. R = 7.5 mΩ @ V = 10 V DS(ON) GSs ..
FDS4070N7 ,40V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS4072N3 ,40V N-Channel PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS4080N3 ,40V N-Channel Bottomless TM PowerTrench MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDS4080N3 ,40V N-Channel Bottomless TM PowerTrench MOSFETApplications • Fast switching (Qg = 30 nC ) • Synchronous rectifier • DC/DC converter • Bottomless ..
FQB6N50TM ,500V N-Channel QFET
FQB6N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 6.2A, 600V, R = 1.5Ω @V = 10 VDS(on) ..
FQB6N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 5.5A, 600V, R = 2.0Ω @V = 10 VDS(on) ..
FQB6N60TM ,600V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 6.2A, 600V, R = 1.5Ω @V = 10 VDS(on) ..
FQB6N70TM ,700V N-Channel QFET
FQB6N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 5.8A, 800V, R = 1.95Ω @V = 10 VDS(on) ..
FDS4070N3
40V N-Channel PowerTrench MOSFET
FDS4070N3 June 2002 FDS4070N3 40V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 15.3 A, 40 V. R = 7.5 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional • High performance trench technology for extremely switching PWM controllers. It has been optimized for low R DS(ON) “low side” synchronous rectifier operation, providing an extremely low R in a small package. DS(ON) • High power and current handling capability Applications • Fast switching, low gate charge • Synchronous rectifier • Bottomless� SO-8 package: Enhanced thermal • DC/DC converter performance in industry-standard package size Bottom-side D NC Drain Contact D 5 4 NC D NC D NC 6 3 D 7 2 Bottomless G G S SO-8 S S 8 1 S S Pin 1SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 40 V DSS V Gate-Source Voltage ± 20 V GSS I Drain Current – Continuous (Note 1a) 15.3 A D – Pulsed 60 Maximum Power Dissipation (Note 1a) 3.0 P W D T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 40 R °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 0.5 RθJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS4070N3 FDS4070N3 13’’ 12mm 2500 units FDS4070N3 Rev B (W) 2002
