FDS3680 ,100V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 5.2 A, 100 V. R = 46 mΩ @ V = 10 VDS(ON) GSspecifi ..
FDS3680 ,100V N-Channel PowerTrench MOSFETFDS3680November 2000FDS3680 100V N-Channel PowerTrench MOSFET
FDS3682 ,N-Channel PowerTrench ?MOSFETApplicationsr = 30mΩ (Typ.), V = 10V, I = 6A DC/DC converters and Off-Line UPSDS(ON) GS DQ (tot ..
FDS3682 ,N-Channel PowerTrench ?MOSFETFDS3682July 2002FDS3682®N-Channel PowerTrench MOSFET100V, 6A, 35mΩ
FDS3690 ,100V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 4.2 A, 100 V. R = 64 mΩ @ V = 10 VDS(ON) GSspecifi ..
FDS3690 ,100V N-Channel PowerTrench MOSFETApplications• DC/DC converter• Motor DriverD5 4DD6D 37 2GS18SSO-8 SoAbsolute Maximum Ratings ..
FQB5P20 ,200V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effect
FQB5P20TM ,200V P-Channel QFETGeneral DescriptionThese P-Channel enhancement mode power field effect
FQB60N03L ,30V LOGIC N-Channel MOSFETapplications such as DC/DCconverters, high efficiency switching for powermanagement in portable and ..
FQB60N03L ,30V LOGIC N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 60A, 30V, R = 0.0135Ω @V = 10 VDS(on) ..
FQB630 ,200V N-Channel MOSFET
FQB65N06 ,60V N-Channel MOSFETapplications such as automotive, DC/DC converters, and high efficiency switching for powermanagemen ..
FDS3680
100V N-Channel PowerTrench MOSFET
FDS3680 November 2000 FDS3680 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 5.2 A, 100 V. R = 46 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 51 mΩ @ V = 6 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. • Low gate charge These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable • Fast switching speed R specifications. DS(ON) • High performance trench technology for extremely The result is a MOSFET that is easy and safer to drive low R DS(ON) (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. • High power and current handling capability D D 5 4 D D 6 3 2 7 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 100 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 1a) 5.2 A D – Pulsed 50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range -55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 R °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS3680 FDS3680 13’’ 12mm 2500 units FDS3680 Rev C (W) 2000
