FDS3672 ,100V, 0.022 Ohms, 7.5A, N-Channel UltraFET ?Trench MOSFETFeatures®UltraFET devices combine characteristics that enable r = 0.019Ω (Typ.), V = 10V DS(ON) GS ..
FDS3672_NL ,Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 7.5A, 0.022 Ohm @ Vgs = 10V, SO-8 PackageApplicationsr = 19mΩ (Typ.), V = 10V, I = 7.5A DC/DC converters and Off-Line UPSDS(ON) GS DQ (t ..
FDS3680 ,100V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 5.2 A, 100 V. R = 46 mΩ @ V = 10 VDS(ON) GSspecifi ..
FDS3680 ,100V N-Channel PowerTrench MOSFETFDS3680November 2000FDS3680 100V N-Channel PowerTrench MOSFET
FDS3682 ,N-Channel PowerTrench ?MOSFETApplicationsr = 30mΩ (Typ.), V = 10V, I = 6A DC/DC converters and Off-Line UPSDS(ON) GS DQ (tot ..
FDS3682 ,N-Channel PowerTrench ?MOSFETFDS3682July 2002FDS3682®N-Channel PowerTrench MOSFET100V, 6A, 35mΩ
FQB5N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 4.8A, 800V, R = 2.6Ω @V = 10 VDS(on) ..
FQB5N80TM ,800V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 4.8A, 800V, R = 2.6Ω @V = 10 VDS(on) ..
FQB5N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 5.4A, 900V, R = 2.3 Ω @ V = 10 VDS(on ..
FQB5P10TM ,100V P-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQB5P20 ,200V P-Channel MOSFETGeneral DescriptionThese P-Channel enhancement mode power field effect
FQB5P20TM ,200V P-Channel QFETGeneral DescriptionThese P-Channel enhancement mode power field effect
FDS3672
100V, 0.022 Ohms, 7.5A, N-Channel UltraFET ?Trench MOSFET
FDS3672 February 2002 FDS3672 ® 100V, 0.022 Ohms, 7.5A, N-Channel UltraFET Trench MOSFET General Description Features ® UltraFET devices combine characteristics that enable r = 0.019Ω (Typ.), V = 10V DS(ON) GS benchmark efficiency in power conversion applications. Q = 28nC (Typ.), V = 10V Optimized for Rds(on), low ESR, low total and Miller gate g(TOT) GS charge, these devices are ideal for high frequency DC to Low Q Body Diode DC converters. RR Maximized efficiency at high frequencies Applications DC/DC convertersUIS Rated Telecom and Data-Com Distributed Power Architectures 48-volt I/P Half-Bridge/Full-Bridge 24-volt Forward and Push-Pull topologies Branding Dash 5 4 5 6 3 1 2 7 2 3 4 8 1 SO-8 MOSFET Maximum Ratings T =25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DSS V Gate to Source Voltage ±20 V GS Drain Current o o 7.5 A Continuous (T = 25 C, V = 10V, R = 50 C/W) A GS θJA I D o o Continuous (T = 100 C, V = 10V, R = 50C/W) 4.8 A A GS θJA Pulsed Figure 4 A Power dissipation 2.5 W P D o o Derate above 25 C 20 mW/ C o T , T Operating and Storage Temperature -55 to 150 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case (NOTE1) 25 C/W θJC o R Thermal Resistance Junction to Case at 10 seconds (NOTE2) 50 C/W θJA o R Thermal Resistance Junction to Case at Steady State (NOTE2) 85 C/W θJA Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS3672 FDS3672 330mm 12mm 2500units ©2002 FDS3672 Rev. A1, February 2002
