FDS3670 ,100V N-Channel PowerTrench MOSFETFDS3670November 2000FDS3670 100V N-Channel PowerTrench MOSFET
FDS3670 ,100V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 6.3 A, 100 V. R = 32 mΩ @ V = 10 VDS(ON) GSspecifi ..
FDS3670 ,100V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 6.3 A, 100 V. R = 32 mΩ @ V = 10 VDS(ON) GSspecifi ..
FDS3672 ,100V, 0.022 Ohms, 7.5A, N-Channel UltraFET ?Trench MOSFETFeatures®UltraFET devices combine characteristics that enable r = 0.019Ω (Typ.), V = 10V DS(ON) GS ..
FDS3672_NL ,Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 7.5A, 0.022 Ohm @ Vgs = 10V, SO-8 PackageApplicationsr = 19mΩ (Typ.), V = 10V, I = 7.5A DC/DC converters and Off-Line UPSDS(ON) GS DQ (t ..
FDS3680 ,100V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 5.2 A, 100 V. R = 46 mΩ @ V = 10 VDS(ON) GSspecifi ..
FQB5N20TM ,200V N-Channel QFET
FQB5N50C ,500V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 5A, 500V, R = 1.4 Ω @V = 10 VDS(on) ..
FQB5N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 4.8A, 800V, R = 2.6Ω @V = 10 VDS(on) ..
FQB5N80TM ,800V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 4.8A, 800V, R = 2.6Ω @V = 10 VDS(on) ..
FQB5N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 5.4A, 900V, R = 2.3 Ω @ V = 10 VDS(on ..
FQB5P10TM ,100V P-Channel QFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FDS3670
100V N-Channel PowerTrench MOSFET
FDS3670 November 2000 FDS3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 6.3 A, 100 V. R = 32 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 35 mΩ @ V = 6 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. • Low gate charge (57 nC typical) These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable • Fast switching speed R specifications. DS(ON) • High performance trench technology for extremely The result is a MOSFET that is easy and safer to drive low R DS(ON) (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. • High power and current handling capability D D 5 4 D D 6 3 2 7 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 100 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 1a) 6.3 A D – Pulsed 50 P Power Dissipation for Single Operation (Note 1a) 2.5 W D (Note 1b) 1.2 (Note 1c) 1.0 T , T Operating and Storage Junction Temperature Range -55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 50 R °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS3670 FDS3670 13’’ 12mm 2500 units FDS3670 Rev C(W) 2000
