FDS3612 ,100V N-Channel PowerTrench MOSFETFeatures This N-Channel MOSFET has been designed • 3.4 A, 100 V. R = 120 mΩ @ V = 10 V DS(ON) GSspe ..
FDS3612 ,100V N-Channel PowerTrench MOSFETApplications • DC/DC converter • Motor Driver DD5 4DD6 37 2GS8 1SSO-8 S oAbsolute Maximum Ratings ..
FDS3670 ,100V N-Channel PowerTrench MOSFETFDS3670November 2000FDS3670 100V N-Channel PowerTrench MOSFET
FDS3670 ,100V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 6.3 A, 100 V. R = 32 mΩ @ V = 10 VDS(ON) GSspecifi ..
FDS3670 ,100V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 6.3 A, 100 V. R = 32 mΩ @ V = 10 VDS(ON) GSspecifi ..
FDS3672 ,100V, 0.022 Ohms, 7.5A, N-Channel UltraFET ?Trench MOSFETFeatures®UltraFET devices combine characteristics that enable r = 0.019Ω (Typ.), V = 10V DS(ON) GS ..
FQB5N20L ,200V LOGIC N-Channel MOSFET
FQB5N20LTM ,200V N-Channel Logic Level QFET
FQB5N20TM ,200V N-Channel QFET
FQB5N50C ,500V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 5A, 500V, R = 1.4 Ω @V = 10 VDS(on) ..
FQB5N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 4.8A, 800V, R = 2.6Ω @V = 10 VDS(on) ..
FQB5N80TM ,800V N-Channel QFETFeaturesThese N-Channel enhancement mode power field effect 4.8A, 800V, R = 2.6Ω @V = 10 VDS(on) ..
FDS3612
100V N-Channel PowerTrench MOSFET
FDS3612 March 2001 FDS3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 3.4 A, 100 V. R = 120 mΩ @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 130 mΩ @ V = 6 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. • Fast switching speed These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable • Low gate charge (14 nC typ) R specifications. The result is a MOSFET that is DS(ON) easy and safer to drive (even at very high frequencies), • High performance trench technology for extremely and DC/DC power supply designs with higher overall low R DS(ON) efficiency. • High power and current handling capability Applications • DC/DC converter • Motor Driver D D 5 4 D D 6 3 7 2 G S 8 1 S SO-8 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 100 V DSS V Gate-Source Voltage ± 20 V GSS I Drain Current – Continuous (Note 1a) 3.4 A D – Pulsed 20 Power Dissipation for Single Operation (Note 1a) 2.5 P W D (Note 1b) 1.2 (Note 1c) 1.0 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C Thermal Characteristics °C/W R Thermal Resistance, Junction-to-Ambient (Note 1a) 50 θJA Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W R θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS3612 FDS3612 13’’ 12mm 2500 units FDS3612 Rev B1(W) 2001
